公开(公告)号：US08026038B2

公开(公告)日：2011-09-27

申请号：US12275088

申请日：2008-11-20

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Mutsuo Nakashima

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Mutsuo Nakashima

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/11 ,  G03F7/40

CPC分类号： G03F7/11 ,  C08G77/56 ,  C09D183/14 ,  G03F7/0752 ,  H01L21/316

摘要： A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.

摘要翻译： 含有金属氧化物的膜由热固性组合物形成，该组合物包含（A）通过水解性硅化合物和可水解金属化合物之间的水解缩合获得的含金属氧化物的化合物，（B）Li的氢氧化物或有机酸盐， Na，K，Rb或Cs，或锍，碘鎓盐或铵化合物，（C）有机酸和（D）有机溶剂。 含金属氧化物的膜确保有效的图案形成。

公开(公告)号：US08652267B2

公开(公告)日：2014-02-18

申请号：US12591115

申请日：2009-11-09

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

IPC分类号： B08B3/00

CPC分类号： G03F7/423 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/425

摘要： There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).

摘要翻译： 公开了一种涂覆型含硅膜剥离工艺，用于剥离以除去通过在基板上涂布用于光刻的含硅膜组合物而获得的涂覆型含硅膜，该涂覆型含硅膜至少包括：第一 用含有硫酸根离子和/或氟离子的酸性汽提溶液处理含硅膜的步骤; 以及用含有氮化合物的碱性汽提溶液处理含硅膜的第二步骤。 可以提供一种方法，用于允许除去干法汽提之前没有常规去除的含硅膜通过基于剥离溶液（湿剥离）的汽提方法除去。

公开(公告)号：US08501386B2

公开(公告)日：2013-08-06

申请号：US13205262

申请日：2011-08-08

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Koji Hasegawa

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Koji Hasegawa

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/40

CPC分类号： G03F7/094 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11

摘要： A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.

摘要翻译： 一种用于形成用于光刻的多层抗蚀剂工艺中的含硅膜的热固性含硅膜形成组合物，该组合物至少包括：（A）通过水解缩合得到的含硅化合物 可水解硅化合物和选自可水解硅化合物和反应性化合物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价或两价或更多价的有机酸; 和（D）有机溶剂。

公开(公告)号：US20100086872A1

公开(公告)日：2010-04-08

申请号：US12461726

申请日：2009-08-21

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

IPC分类号： G03F7/00

CPC分类号： G03F7/11 ,  C08G77/58 ,  C09D183/04 ,  G03F7/0752

摘要： There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multi-layer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process.

摘要翻译： 公开了一种用于形成在用于光刻的多层抗蚀剂工艺中形成的含金属氧化物的膜的含热固性金属氧化物的成膜组合物，所述含热固性金属氧化物的成膜组合物至少包含：（A ）通过水解性硅化合物和可水解金属化合物的水解缩合获得的含金属氧化物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价，二价或更高级的有机酸; （D）三价或更高级醇; 和（E）有机溶剂。 可以在多层抗蚀剂工艺中提供含金属氧化物的成膜组合物，使得由该组合物制成的膜能够形成光致抗蚀剂膜的优异图案，该组合物能够形成 含有金属氧化物的膜作为具有优异的耐干蚀刻性的蚀刻掩模，该组合物具有优异的储存稳定性，并且由组合物制成的膜可通过在去除过程中使用的溶液除去; 含金属氧化物的膜形成基板; 和图案形成处理。

公开(公告)号：US08951917B2

公开(公告)日：2015-02-10

申请号：US13524669

申请日：2012-06-15

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Fujio Yagihashi

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Fujio Yagihashi

IPC分类号： C09D183/00 ,  C09D183/06 ,  C08L83/06 ,  H01L21/312 ,  G03F7/075 ,  G03F7/09 ,  C08G77/14 ,  C08G77/18 ,  C08G77/56 ,  C08G77/58

CPC分类号： C09D183/06 ,  C08G77/14 ,  C08G77/18 ,  C08G77/56 ,  C08G77/58 ,  C08L83/06 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/094

摘要： The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition R1m1R2m2R3m3Si(OR)(4-m1-m2-m3)  (1) U(OR4)m4(OR5)m5  (2) R6m6R7m7R8m8Si(OR9)(4-m6-m7-m8)  (3) Si(OR10)4  (4).

摘要翻译： 本发明提供一种用于形成含硅抗蚀剂下层膜的组合物，其包含：（A）通过水解 - 缩合反应获得的含硅化合物，所述含硅化合物含有至少一种或多种可水解的硅化合物， 式（1）和一种或多种下述通式（2）所示的可水解化合物，和（B）通过水解缩合反应获得的含硅化合物，所述含硅化合物含有至少一种或多种可水解硅化合物 由以下通式（3）表示，和一种或多种下述通式（4）表示的可水解硅化合物。 可以提供一种用于形成抗蚀剂下层膜的组合物，其不仅可用于以负显影获得的抗蚀图案，而且可应用于以常规阳极显影获得的抗蚀剂图案，以及使用该组合物R1m1R2m2R3m3Si（OR）（4） -m1-m2-m3）（1）U（OR4）m4（OR5）m5（2）R6m6R7m7R8m8Si（OR9）（4-m6-m7-m8）（3）Si（OR10）4（4）。

公开(公告)号：US08859189B2

公开(公告)日：2014-10-14

申请号：US13430319

申请日：2012-03-26

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

IPC分类号： G03F7/26 ,  G03F7/075 ,  G03F7/32

CPC分类号： G03F7/0752 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

摘要： The invention provides a patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition, a step of exposing to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35° or more to lower than 70° after exposure is used as the composition. There can be optimum patterning process as a patterning process of a negative resist pattern to be formed by adopting organic solvent-based development.

摘要翻译： 本发明提供一种图案化工艺，其至少包括通过使用含硅膜组合物在待加工物体上形成含硅膜的步骤，在含硅膜上形成光致抗蚀剂的步骤 通过使用抗蚀剂组合物的膜，通过热处理后暴露于光致抗蚀剂膜的步骤，以及通过使用有机溶剂的显影剂溶解光致抗蚀剂膜的未曝光区域而形成负图案的步骤; 其中使用赋予与光致抗蚀剂膜的曝光区域相对应的部分中的纯水接触角在曝光后变为35°以上且低于70°的范围内的含硅膜的组合物作为组合物。 作为通过采用有机溶剂型显影形成的负型抗蚀剂图案的图案化工艺，可以进行最佳的图案化处理。

公开(公告)号：US08697330B2

公开(公告)日：2014-04-15

申请号：US12662582

申请日：2010-04-23

申请人： Tsutomu Ogihara ,  Toshiharu Yano ,  Takafumi Ueda

发明人： Tsutomu Ogihara ,  Toshiharu Yano ,  Takafumi Ueda

IPC分类号： G03F7/09 ,  G03F7/11 ,  C08G77/04

CPC分类号： G03F7/0755 ,  C08G77/04 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/0276

摘要： There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index “n” and extinction coefficient “k” at 193 nm satisfy the following relationship: 2n−3.08≦k≦20n−29.4 and 0.01≦k≦0.5. There can be provided, in a multilayer resist process used in a lithography, a thermosetting silicon-containing antireflection film-forming composition to form a silicon-containing antireflection film which can form an excellent pattern having depressed reflection of an exposing light at the time when a photoresist film is formed on the silicon-containing antireflection film formed on an organic film having a naphthalene skeleton as a resist underlayer film and subsequently a resist pattern is formed; has excellent dry etching properties between the photoresist film—which is the upperlayer of the silicon-containing antireflection film—and the organic film—which is the underlayer—; and has an excellent storage stability, and a substrate having the silicon-containing antireflection film from the composition for forming the silicon-containing antireflection film, and a patterning process using the same.

摘要翻译： 公开了一种热固性含硅抗反射膜形成组合物，用于在光刻中使用的多层抗蚀剂工艺中形成含硅抗反射膜，其中组合物至少能够形成在作为底层的有机膜上 具有萘骨架的膜 - 193nm处的折射率“n”和消光系数“k”的含硅抗反射膜满足以下关系：2n-3.08＆nlE; k＆lt; ll; 20n-29.4和0.01＆nlE; k＆nlE; 0.5。 在光刻中使用的多层抗蚀剂工艺中，可以提供一种形成含硅抗反射膜的热固性含硅抗反射膜形成组合物，该组合物可以形成具有在曝光光的下降反射的优异图案， 在具有萘骨架的有机膜上形成的含硅抗反射膜作为抗蚀剂下层膜上形成光致抗蚀剂膜，随后形成抗蚀剂图案; 在作为含硅抗反射膜的上层的光致抗蚀剂膜与作为下层的有机膜之间具有优良的干蚀刻性能; 并且具有优异的储存稳定性，以及具有来自用于形成含硅抗反射膜的组合物的含硅抗反射膜的基板和使用其的图案化工艺。

公开(公告)号：US20100285407A1

公开(公告)日：2010-11-11

申请号：US12662582

申请日：2010-04-23

申请人： Tsutomu Ogihara ,  Toshiharu Yano ,  Takafumi Ueda

发明人： Tsutomu Ogihara ,  Toshiharu Yano ,  Takafumi Ueda

IPC分类号： G03F7/004 ,  G03F7/20 ,  C08G77/00

CPC分类号： G03F7/0755 ,  C08G77/04 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/0276

摘要： There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index “n” and extinction coefficient “k” at 193 nm satisfy the following relationship: 2n−3.08≦k≦20n−29.4 and 0.01≦k≦0.5. There can be provided, in a multilayer resist process used in a lithography, a thermosetting silicon-containing antireflection film-forming composition to form a silicon-containing antireflection film which can form an excellent pattern having depressed reflection of an exposing light at the time when a photoresist film is formed on the silicon-containing antireflection film formed on an organic film having a naphthalene skeleton as a resist underlayer film and subsequently a resist pattern is formed; has excellent dry etching properties between the photoresist film—which is the upperlayer of the silicon-containing antireflection film—and the organic film—which is the underlayer—; and has an excellent storage stability, and a substrate having the silicon-containing antireflection film from the composition for forming the silicon-containing antireflection film, and a patterning process using the same.

摘要翻译： 公开了一种热固性含硅抗反射膜形成组合物，用于在光刻中使用的多层抗蚀剂工艺中形成含硅抗反射膜，其中组合物至少能够形成在作为底层的有机膜上 具有萘骨架的膜 - 193nm处的折射率“n”和消光系数“k”的含硅抗反射膜满足以下关系：2n-3.08＆nlE; k＆lt; ll; 20n-29.4和0.01＆nlE; k＆nlE; 0.5。 在光刻中使用的多层抗蚀剂工艺中，可以提供一种形成含硅抗反射膜的热固性含硅抗反射膜形成组合物，该组合物可以形成具有在曝光光的下降反射的优异图案， 在具有萘骨架的有机膜上形成的含硅抗反射膜作为抗蚀剂下层膜上形成光致抗蚀剂膜，随后形成抗蚀剂图案; 在作为含硅抗反射膜的上层的光致抗蚀剂膜与作为下层的有机膜之间具有优良的干蚀刻性能; 并且具有优异的储存稳定性，以及具有来自用于形成含硅抗反射膜的组合物的含硅抗反射膜的基板和使用其的图案化工艺。

公开(公告)号：US08932953B2

公开(公告)日：2015-01-13

申请号：US13570403

申请日：2012-08-09

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Yoshinori Taneda

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Yoshinori Taneda

IPC分类号： C08K5/5419 ,  C08L43/04

CPC分类号： G03F7/091 ,  G03F7/0751 ,  G03F7/094 ,  G03F7/11 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40

摘要： A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). R11m11R12m12R13m13Si(OR14)(4−m11−m12−m13)  (2) Si(OR15)4  (3)

摘要翻译： 一种用于形成含硅抗蚀剂下层膜的组合物，其含有：包含至少一种或多种选自下列通式（1-1a）和（ 1-1b），并且能够产生酚羟基，聚合物的水解产物和聚合物的水解 - 缩合物，以及通过混合物的水解缩合获得的作为含硅化合物的组分（B） 含有至少一种或多种由以下通式（2）表示的可水解硅化合物和由以下通式（3）表示的一种或多种可水解硅化合物。 R11m11R12m12R13m13Si（OR14）（4-m11-m12-m13）（2）Si（OR15）4（3）

公开(公告)号：US08835102B2

公开(公告)日：2014-09-16

申请号：US13416842

申请日：2012-03-09

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

IPC分类号： G03F7/26 ,  G03F7/075 ,  C08L83/14 ,  C09D183/04 ,  C08L83/04 ,  G03F7/09 ,  G03F7/11 ,  G03F7/32

CPC分类号： G03F7/0757 ,  C08L83/04 ,  C08L83/14 ,  C09D183/04 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/325 ,  C08G77/04

摘要： The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

摘要翻译： 本发明提供一种用于通过光刻形成负型图案的图案化工艺，其至少包括以下步骤：使用含有特定含硅化合物（A）和有机溶剂（B）的含硅膜形成用组合物以形成 含硅膜; 使用无硅抗蚀剂组合物在含硅膜上形成光致抗蚀剂膜; 热处理光致抗蚀剂膜，然后将光致抗蚀剂膜暴露于高能量束; 并使用包含有机溶剂的显影剂来溶解光致抗蚀剂膜的未曝光区域，由此获得负图案。 可以存在作为通过采用有机溶剂型显影形成的负型抗蚀剂的图案化工艺的最佳方案，以及用于形成所述工艺中使用的含硅膜的组合物。