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1.发明授权Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效绝缘管，采用该管的半导体器件及其制造方法公开(公告)号：US07345352B2
公开(公告)日：2008-03-18
申请号：US11715844
申请日：2007-03-09
IPC分类号： H01L29/00
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译： 绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔， 具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。
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公开(公告)号：US06995472B2
公开(公告)日：2006-02-07
申请号：US10693504
申请日：2003-10-27
IPC分类号： H01L23/48
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译： 绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔， 具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。
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3.发明授权Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效绝缘管，采用该管的半导体器件及其制造方法公开(公告)号：US07282437B2
公开(公告)日：2007-10-16
申请号：US11244293
申请日：2005-10-06
IPC分类号： H01L21/4763
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译： 绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔， 具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。
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4.发明申请公开(公告)号：US20070170594A1
公开(公告)日：2007-07-26
申请号：US11715844
申请日：2007-03-09
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
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5.发明申请Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效绝缘管，采用该管的半导体器件及其制造方法公开(公告)号：US20060054990A1
公开(公告)日：2006-03-16
申请号：US11244293
申请日：2005-10-06
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译： 绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔， 具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。
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6.发明申请Insulating tube, semiconductor device employing the tube, and method of manufacturing the same 失效绝缘管，采用该管的半导体器件及其制造方法公开(公告)号：US20050023690A1
公开(公告)日：2005-02-03
申请号：US10693504
申请日：2003-10-27
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/44 , H01L23/48
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/7682 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.
摘要翻译： 绝缘管包括下面的绝缘膜，设置在下面的绝缘膜上的第一侧壁绝缘膜，设置在下面的绝缘膜上的与第一侧壁绝缘膜相对的第二侧壁绝缘膜，以便在第一和第二绝缘膜之间提供空腔， 具有与第一侧壁绝缘膜相同高度的第二侧壁绝缘膜，以及设置在第一和第二侧壁绝缘膜上的上绝缘膜。
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7.发明申请Photoresist residue remover composition and semiconductor circuit element production process employing the same 审中-公开光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法公开(公告)号：US20050209118A1
公开(公告)日：2005-09-22
申请号：US11008019
申请日：2004-12-09
申请人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
发明人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
IPC分类号： H01L21/027 , G03F7/42 , H01L21/02 , H01L21/304 , C11D1/00
CPC分类号： G03F7/423 , H01L21/02063 , H01L21/02071
摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.
摘要翻译： 提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线 金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种制造半导体电路元件的方法，其中在形成铝，铜，钨和任何这些金属作为主要成分的合金的任何金属的布线的步骤中，使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。
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8.发明授权Photoresist residue remover composition and semiconductor circuit element production process employing the same 失效光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法公开(公告)号：US07816313B2
公开(公告)日：2010-10-19
申请号：US12082173
申请日：2008-04-08
申请人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
发明人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
IPC分类号： H01L21/02
CPC分类号： G03F7/423 , H01L21/02063 , H01L21/02071
摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.
摘要翻译： 提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线 金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种用于制造半导体电路元件的方法，其中在以任何这些金属为主要成分的铝，铜，钨和任何金属的任何金属的布线形成步骤中，使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。
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9.发明申请Photoresist residue remover composition and semiconductor circuit element production process employing the same 失效光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法公开(公告)号：US20080318424A1
公开(公告)日：2008-12-25
申请号：US12082173
申请日：2008-04-08
申请人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
发明人： Hiroshi Kawamoto , Mikie Miyasato , Takuo Oowada , Norio Ishikawa
IPC分类号： H01L21/44
CPC分类号： G03F7/423 , H01L21/02063 , H01L21/02071
摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.
摘要翻译： 提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线 金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种用于制造半导体电路元件的方法，其中在以任何这些金属为主要成分的铝，铜，钨和任何金属的任何金属的布线形成步骤中，使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。
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公开(公告)号：US20110275647A1
公开(公告)日：2011-11-10
申请号：US13144316
申请日：2010-02-22
IPC分类号： A61K31/501 , A61K31/519 , A61P3/06 , A61P3/10 , A61P3/04 , A61K31/497 , C07D471/04
CPC分类号： C07D471/04
摘要： The present invention relates to a compound represented by a formula (I): or a pharmaceutically acceptable salt thereof, wherein R1 represents lower alkyl or the like; R2 represents phenyl or the like; R represents a halogen atom or the like; X represents an oxygen atom or the like; Y1, Y2, Y3 and Y4 represent CH or the like; l represents an integer of from 0 to 3; m and n each represent an integer of 1 or 2; p represents an integer of from 0 to 2; and q represents an integer of from 1 to 3.
摘要翻译： 本发明涉及由式（I）表示的化合物或其药学上可接受的盐，其中R 1表示低级烷基等; R2表示苯基等; R表示卤素原子等; X表示氧原子等; Y1，Y2，Y3和Y4表示CH等; l表示0〜3的整数， m和n各自表示1或2的整数; p表示0〜2的整数， q表示1〜3的整数。
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