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    SEMICONDUCTOR DEVICE FABRICATION METHOD
    7.
    发明申请
    SEMICONDUCTOR DEVICE FABRICATION METHOD 审中-公开
    半导体器件制造方法

    公开(公告)号：US20090286391A1

    公开(公告)日：2009-11-19

    申请号：US12509597

    申请日：2009-07-27

    申请人： Takahito Nakajima ,  Yoshihiro Uozumi ,  Mikie Miyasato ,  Tsuyoshi Matsumura ,  Yasuhito Yoshimizu ,  Hiroshi Tomita ,  Hiroki Sakurai

    发明人： Takahito Nakajima ,  Yoshihiro Uozumi ,  Mikie Miyasato ,  Tsuyoshi Matsumura ,  Yasuhito Yoshimizu ,  Hiroshi Tomita ,  Hiroki Sakurai

    IPC分类号： H01L21/768 ,  H01L21/308 ,  H01L21/3205

    CPC分类号： H01L21/76877 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/32051 ,  H01L21/32134 ,  H01L21/76814

    摘要： According to one aspect of the invention, there is provided a qsemiconductor device fabrication method having:forming a film on a semiconductor substrate;forming a mask comprising a predetermined pattern on the film;etching one of the film and the semiconductor substrate by using the mask; andperforming at least one of the steps of performing a treatment using one of an aqueous solution of at least one of ammonia and amine, the amine being selected from primary amine, secondary amine, tertiary amine, and quaternary amine, a treatment using a liquid chemical containing fluorine and at least one of amine, the amine being selected from primary amine, secondary amine, tertiary amine, and quaternary amine and fluorine, and a treatment using a liquid chemical containing at least ammonia and fluorine and including a pH of not less than 6, particularly, not less than 9.

    摘要翻译： 根据本发明的一个方面，提供了一种半导体器件制造方法，其具有：在半导体衬底上形成膜; 在所述膜上形成包含预定图案的掩模; 通过使用掩模蚀刻膜和半导体衬底之一; 并且执行使用氨和胺中的至少一种的水溶液中的一种进行处理的步骤中的至少一个，所述胺选自伯胺，仲胺，叔胺和季胺，使用液体 含有氟的化合物和胺中的至少一种，胺选自伯胺，仲胺，叔胺和季胺和氟，以及使用至少含有氨和氟的液体化学品的处理，并且包括不低于 超过6，特别是不小于9。

    Semiconductor device fabrication method
    8.
    发明申请
    Semiconductor device fabrication method 审中-公开
    半导体器件制造方法

    公开(公告)号：US20070054482A1

    公开(公告)日：2007-03-08

    申请号：US11501109

    申请日：2006-08-09

    申请人： Takahito Nakajima ,  Yoshihiro Uozumi ,  Mikie Miyasato ,  Tsuyoshi Matsumura ,  Yasuhito Yoshimizu ,  Hiroshi Tomita ,  Hiroki Sakurai

    发明人： Takahito Nakajima ,  Yoshihiro Uozumi ,  Mikie Miyasato ,  Tsuyoshi Matsumura ,  Yasuhito Yoshimizu ,  Hiroshi Tomita ,  Hiroki Sakurai

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76877 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/32051 ,  H01L21/32134 ,  H01L21/76814

    摘要： According to one aspect of the invention, there is provided a semiconductor device fabrication method having: forming a film on a semiconductor substrate; forming a mask comprising a predetermined pattern on the film; etching one of the film and the semiconductor substrate by using the mask; and performing at least one of the steps of performing a treatment using one of an aqueous solution of at least one of ammonia and amine, the amine being selected from primary amine, secondary amine, tertiary amine, and quaternary amine, a treatment using a liquid chemical containing fluorine and at least one of amine, the amine being selected from primary amine, secondary amine, tertiary amine, and quaternary amine and fluorine, and a treatment using a liquid chemical containing at least ammonia and fluorine and including a pH of not less than 6, particularly, not less than 9.

    摘要翻译： 根据本发明的一个方面，提供了一种半导体器件制造方法，其具有：在半导体衬底上形成膜; 在所述膜上形成包含预定图案的掩模; 通过使用掩模蚀刻膜和半导体衬底之一; 并且执行使用氨和胺中的至少一种的水溶液中的一种进行处理的步骤中的至少一个，所述胺选自伯胺，仲胺，叔胺和季胺，使用液体 含有氟的化合物和胺中的至少一种，胺选自伯胺，仲胺，叔胺和季胺和氟，以及使用至少含有氨和氟的液体化学品的处理，并且包括不低于 超过6，特别是不小于9。