公开(公告)号：US06946344B2

公开(公告)日：2005-09-20

申请号：US10620743

申请日：2003-07-16

申请人： Shih-Chung Chou ,  Yi-Nan Chen ,  Tzu-Ching Tsai

发明人： Shih-Chung Chou ,  Yi-Nan Chen ,  Tzu-Ching Tsai

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/8242

CPC分类号： H01L27/10861 ,  H01L27/1087 ,  Y10T29/41

摘要： A method for forming a trench capacitor. A semiconductor substrate with a trench is provided, and a trench capacitor is formed in the trench with a storage node and a node dielectric layer. The top portion of the trench is ion implanted to a predetermined angle to form an ion doped area on a sidewall of the top portion of the trench and a top surface of the trench capacitor. The ion doped area is oxidized to form an oxide layer. A sidewall semiconductor layer is formed on another sidewall using the oxide layer as a mask, and then the oxide layer is removed. A barrier layer is conformally formed on the surface of the trench, and the trench is filled with a conducting layer.

摘要翻译： 一种形成沟槽电容器的方法。 提供具有沟槽的半导体衬底，并且沟槽电容器在沟槽中形成有存储节点和节点电介质层。 将沟槽的顶部离子注入预定角度，以在沟槽顶部的侧壁和沟槽电容器的顶表面上形成离子掺杂区域。 离子掺杂区域被氧化形成氧化物层。 使用氧化物层作为掩模在另一侧壁上形成侧壁半导体层，然后除去氧化物层。 在沟槽的表面上保形地形成阻挡层，并且沟槽填充有导电层。

公开(公告)号：US06852590B1

公开(公告)日：2005-02-08

申请号：US10709926

申请日：2004-06-07

申请人： Tzu-Ching Tsai ,  Shih-Chung Chou

发明人： Tzu-Ching Tsai ,  Shih-Chung Chou

IPC分类号： H01L21/8242

CPC分类号： H01L27/10867

摘要： A method of fabricating a deep trench capacitor is described. A substrate having a deep trench therein is provided. A doped region is formed in the substrate at the bottom of the deep trench, a dielectric layer is formed on the bottom surface of the deep trench, and a first conductive layer is formed on the dielectric layer. A collar oxide layer is formed on sidewalls of the deep trench that are not covered by the first conductive layer. A material layer is formed covering the first conductive layer and exposing a portion of the collar oxide layer. The exposed collar oxide layer is removed to expose the substrate. Then, the material layer is removed, and a second conductive layer is formed in the deep trench covering the first conductive layer and the collar oxide layer. In this invention, only the second conductive layer is formed on the first conductive layer for electrically connecting the capacitor and an active device, hence the method is more simple.

摘要翻译： 描述制造深沟槽电容器的方法。 提供其中具有深沟槽的衬底。 在深沟槽的底部的衬底中形成掺杂区域，在深沟槽的底表面上形成介电层，并且在介电层上形成第一导电层。 在深沟槽的不被第一导电层覆盖的侧壁上形成环状氧化物层。 形成覆盖第一导电层并暴露套环氧化物层的一部分的材料层。 去除暴露的环状氧化物层以暴露衬底。 然后，去除材料层，并且在覆盖第一导电层和套环氧化物层的深沟槽中形成第二导电层。 在本发明中，仅在第一导电层上形成第二导电层，用于电连接有源器件，因此该方法更简单。

公开(公告)号：US06953723B2

公开(公告)日：2005-10-11

申请号：US10768069

申请日：2004-02-02

申请人： Shih-Chung Chou ,  Yi-Nan Chen

发明人： Shih-Chung Chou ,  Yi-Nan Chen

IPC分类号： H01L21/306 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L21/02233 ,  H01L21/02299 ,  H01L21/30604 ,  H01L21/31662 ,  H01L27/1087

摘要： Disclosed is a method for forming a bottle shaped trench. The method of the present invention includes steps of providing a substrate; forming a plurality of operation layers on the substrate; forming a photoresist layer on the operation layers to define a predetermined position; forming a trench according to the predetermined position; implanting predetermined ions, which reduces oxidizing rate of the sidewall of the trench, into the upper sidewall of the trench; oxidizing the sidewall of the trench to form an oxide layer, in which the portion of the oxide layer formed at the portion of the sidewall implanted with the ions is thin, while the portion of the oxide layer formed at the portion of the sidewall not implanted with the ions is thick; and removing the oxide layer to form a bottle shaped trench.

摘要翻译： 公开了一种形成瓶形沟槽的方法。 本发明的方法包括提供基板的步骤; 在所述基板上形成多个操作层; 在所述操作层上形成光致抗蚀剂层以限定预定位置; 根据所述预定位置形成沟槽; 将预定离子注入到沟槽的上侧壁中，该离子将沟槽侧壁的氧化速率降低; 氧化沟槽的侧壁以形成氧化物层，其中形成在注入离子的侧壁部分处的氧化物层的部分较薄，而氧化层部分形成在侧壁部分未被植入 离子浓度较大; 并去除氧化物层以形成瓶形沟槽。

公开(公告)号：US20050170581A1

公开(公告)日：2005-08-04

申请号：US10768069

申请日：2004-02-02

申请人： Shih-Chung Chou ,  Yi-Nan Chen

发明人： Shih-Chung Chou ,  Yi-Nan Chen

IPC分类号： H01L21/306 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L21/02233 ,  H01L21/02299 ,  H01L21/30604 ,  H01L21/31662 ,  H01L27/1087

摘要： Disclosed is a method for forming a bottle shaped trench. The method of the present invention includes steps of providing a substrate; forming a plurality of operation layers on the substrate; forming a photoresist layer on the operation layers to define a predetermined position; forming a trench according to the predetermined position; implanting predetermined ions, which reduces oxidizing rate of the sidewall of the trench, into the upper sidewall of the trench; oxidizing the sidewall of the trench to form an oxide layer, in which the portion of the oxide layer formed at the portion of the sidewall implanted with the ions is thin, while the portion of the oxide layer formed at the portion of the sidewall not implanted with the ions is thick; and removing the oxide layer to form a bottle shaped trench.

摘要翻译： 公开了一种形成瓶形沟槽的方法。 本发明的方法包括提供基板的步骤; 在所述基板上形成多个操作层; 在所述操作层上形成光致抗蚀剂层以限定预定位置; 根据所述预定位置形成沟槽; 将预定离子注入到沟槽的上侧壁中，该离子将沟槽侧壁的氧化速率降低; 氧化沟槽的侧壁以形成氧化物层，其中形成在注入离子的侧壁部分处的氧化物层的部分较薄，而氧化层部分形成在侧壁部分未被植入 离子浓度较大; 并去除氧化物层以形成瓶形沟槽。