公开(公告)号：US20150311375A1

公开(公告)日：2015-10-29

申请号：US14285964

申请日：2014-05-23

申请人： U.S. Army Research Laboratory ATTN: RDRL-LOC-I

发明人： Paul Shen ,  Lee Ellen Rodak ,  Chad Stephen Gallinat ,  Anand Venktesh Sampath ,  Michael Wraback

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0296 ,  H01L31/0224 ,  H01L31/0336 ,  H01L31/0304

CPC分类号： H01L31/1075 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/03044 ,  H01L31/03046 ,  H01L31/0336 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.

摘要翻译： 一种制造方法和一种包括基底的光电探测器; p型或n型层; 每个具有偏振的第一和第二区域，其间的第一界面，所述第一和第二偏振的幅度和方向使得相对于投射到生长方向上的第一偏振的标量投影的生长方向上的第二偏振的标量投影 足以创建第一接口电荷; 以及适于在其上形成具有第三偏振的第一极化的第二极化的第二界面和第三区之间的第二界面的第三区域，所述第三极化在生长方向上具有标量投影，相对于标量 将第二偏振投影到生长方向上足以产生第二界面电荷; 所述第一和第二界面电荷为限定预定波长范围的载流子产生静电势垒。

公开(公告)号：US20160300973A1

公开(公告)日：2016-10-13

申请号：US15180397

申请日：2016-06-13

申请人： U.S. Army Research Laboratory ATTN: RDRL-LOC-I

发明人： Paul Shen ,  Lee Ellen Rodak ,  Chad Stephen Gallinat ,  Anand Venktesh Sampath ,  Michael Wraback

IPC分类号： H01L31/107 ,  H01L31/0304 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/0336 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L31/0296 ,  H01L31/03044 ,  H01L31/0336 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/18

摘要： A photodiode comprising a substrate; first semiconducting region; first contact; second region comprising an absorption region for the photons having a predetermined energy range; the second region being formed of a semiconductor having a high surface or interface recombination velocity; a third semiconducting region transparent at the predetermined photon energy range suitable for making an operative connection to a second contact; the second and third regions forming a second interface; the first and second regions forming a first interface; the second region being configured such that biasing the photodiode results in depletion of the second region from the first interface to the second interface or at least one of the absorption depth and the sum of the absorption depth and diffusion length from the second interface; the depletion resulting in the creation of an electric field whereby photogenerated carriers are collected by drift and a method of making the foregoing.

摘要翻译： 包括基板的光电二极管; 第一半导体区; 第一次接触 第二区域包括具有预定能量范围的光子的吸收区域; 所述第二区域由具有高表面或界面复合速度的半导体形成; 在预定的光子能量范围内透明的第三半导体区域，其适于进行与第二接触件的操作连接; 所述第二和第三区域形成第二界面; 所述第一和第二区域形成第一界面; 所述第二区域被配置为使得偏置所述光电二极管导致所述第二区域从所述第一界面到所述第二界面的耗尽或所述吸收深度和所述第二界面的吸收深度和扩散长度的总和中的至少一个; 导致产生电场的耗尽，由此通过漂移收集光生载流子，以及制造上述方法。

公开(公告)号：US09379271B2

公开(公告)日：2016-06-28

申请号：US14285964

申请日：2014-05-23

申请人： U.S. Army Research Laboratory

发明人： Paul Shen ,  Lee Ellen Rodak ,  Chad Stephen Gallinat ,  Anand Venktesh Sampath ,  Michael Wraback

IPC分类号： H01L31/107 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/03044 ,  H01L31/03046 ,  H01L31/0336 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.

摘要翻译： 一种制造方法和一种包括基底的光电探测器; p型或n型层; 每个具有偏振的第一和第二区域，其间的第一界面，所述第一和第二偏振的幅度和方向使得相对于投射到生长方向上的第一偏振的标量投影的生长方向上的第二偏振的标量投影 足以创建第一接口电荷; 以及第三区域，适于形成其上具有第三偏振的第一极化的第一极化，第二和第三区之间的第二界面之间的n金属或p金属接触之一，所述第三极化在生长方向上具有标量投影，相对于标量 将第二偏振投影到生长方向上足以产生第二界面电荷; 所述第一和第二界面电荷为限定预定波长范围的载流子产生静电势垒。