公开(公告)号：US10043964B2

公开(公告)日：2018-08-07

申请号：US15606091

申请日：2017-05-26

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Ryan C. Toonen ,  Mathew P. Ivill ,  Melanie W. Cole

IPC: H01L37/02 ,  H01L27/16 ,  B82Y10/00 ,  H01L29/66 ,  H01L29/93 ,  H01L29/06

Abstract: A pyroelectric device having a substrate and a first electrode overlying at least a portion of the substrate. A plurality of spaced apart nanometer sized pyroelectric elements are electrically connected to and extending outwardly from the first electrode so that each element forms a single domain. A dielectric material is deposited in the space between the individual elements and a second electrode spaced apart from said first electrode is electrically connected to said pyroelectric elements.

公开(公告)号：US20160087111A1

公开(公告)日：2016-03-24

申请号：US14490777

申请日：2014-09-19

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Ryan C. Toonen ,  Mathew P. Ivill ,  Melanie W. Cole

IPC: H01L29/93 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/93 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0676 ,  H01L29/66174

Abstract: An electronic device in the form a two-dimensional array of nanopillars extending generally normal to a substrate is provided. The nanopillars are made from a paraelectric or superparaelectric material. In addition, a linear dielectric medium is located between individual nanopillars. A two-dimensional array of paraelectric or superparaelectric nanopillars and a linear dielectric medium form the effective dielectric medium of a paraelectric or superparaelectric varactor. In some instances, the nanopillars are cylindrical nanopillars that have an average diameter and/or average height/length between 1-300 nanometers. In other instances, the nanopillars are quasi-nanoparticles that form self-aligned nano-junctions. In addition, each of the nanopillars has a single paraelectric or superparaelectric dipole domain therewithin. As such, each of the nanopillars can be void of crystallographic defects, polycrystallinity, interactions between ferroic domains, and defects due to ferroic domain walls.

Abstract translation: 提供了形成二维阵列的纳米柱的电子装置，其大体上垂直于基底延伸。 纳米柱由顺电或超临界材料制成。 此外，线性电介质位于各个纳米柱之间。 顺电或超对数纳米柱和线性介电介质的二维阵列形成顺电或超级介电变容二极管的有效介电介质。 在一些情况下，纳米柱是具有1-300纳米之间的平均直径和/或平均高度/长度的圆柱形纳米柱。 在其他情况下，纳米柱是形成自对准纳米结的准纳米颗粒。 此外，每个纳米柱在其中具有单一的顺电或超临界偶极域。 因此，每个纳米柱可能没有晶体缺陷，多晶性，铁结构域之间的相互作用以及由于铁畴畴壁引起的缺陷。

公开(公告)号：US20180112331A1

公开(公告)日：2018-04-26

申请号：US15788972

申请日：2017-10-20

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Melanie Will Cole ,  Mathew P. Ivill ,  Daniel Shreiber

IPC: C30B30/02 ,  B05D1/00 ,  B05D3/06 ,  C30B29/32 ,  C01G23/00

CPC classification number: C30B30/02 ,  B05D1/005 ,  B05D3/06 ,  C01G23/006 ,  C23C18/1212 ,  C23C18/1291 ,  C23C18/1295 ,  C30B7/00 ,  C30B29/32 ,  H01L29/786

Abstract: Integrated non-linear complex oxide (NLCO) thin film artificial structures include tailored microstructural and crystalline phases for designed material architectures and a method of fabrication. A nano-scale poly crystal-amorphous composite film includes an amorphous matrix surrounding crystalline domains/inclusions of the form of particles, platelets, rods and/or needles, etc. Artificial thin film layered material configurations include bilayers, repeat “unit cell” bilayers with variable stacking periodicity (N), and multilayers whereby each individual layer, ni, exhibits a different microstructural crystallinity phase state, hence the microstructural phase state is variable in the vertical direction perpendicular to the substrate. NLCO elements can be organized in array configurations. The method to create the integrated NLCO thin film artificial structures combines metal-organic solution deposition (MOSD) film fabrication and microwave irradiation (MWI) processing, is tailorable and creates artificial thin film material structures composed of differing microstructural crystalline phase states simultaneously within a single thermal treatment step.

公开(公告)号：US20170263841A1

公开(公告)日：2017-09-14

申请号：US15606091

申请日：2017-05-26

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Ryan C. Toonen ,  Mathew P. Ivill ,  Melanie W. Cole

IPC: H01L37/02 ,  H01L27/16

CPC classification number: H01L37/025 ,  B82Y10/00 ,  H01L27/16 ,  H01L29/0653 ,  H01L29/0676 ,  H01L29/66174 ,  H01L29/93 ,  H01L37/02

Abstract: A pyroelectric device having a substrate and a first electrode overlying at least a portion of the substrate. A plurality of spaced apart nanometer sized pyroelectric elements are electrically connected to and extending outwardly from the first electrode so that each element forms a single domain. A dielectric material is deposited in the space between the individual elements and a second electrode spaced apart from said first electrode is electrically connected to said pyroelectric elements.

公开(公告)号：US09666729B2

公开(公告)日：2017-05-30

申请号：US14490777

申请日：2014-09-19

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Ryan C. Toonen ,  Mathew P. Ivill ,  Melanie W. Cole

IPC: H01L29/06 ,  H01L29/93 ,  H01L29/66

CPC classification number: H01L29/93 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0676 ,  H01L29/66174

Abstract: An electronic device in the form a two-dimensional array of nanopillars extending generally normal to a substrate is provided. The nanopillars are made from a paraelectric or superparaelectric material. In addition, a linear dielectric medium is located between individual nanopillars. A two-dimensional array of paraelectric or superparaelectric nanopillars and a linear dielectric medium form the effective dielectric medium of a paraelectric or superparaelectric varactor. In some instances, the nanopillars are cylindrical nanopillars that have an average diameter and/or average height/length between 1-300 nanometers. In other instances, the nanopillars are quasi-nanoparticles that form self-aligned nano-junctions. In addition, each of the nanopillars has a single paraelectric or superparaelectric dipole domain therewithin. As such, each of the nanopillars can be void of crystallographic defects, polycrystallinity, interactions between ferroic domains, and defects due to ferroic domain walls.