摘要:
The present invention relates to novel precursors in the form of metal complexes with 2-substituted 1,3-diketones and to a process for the preparation thereof. The invention furthermore relates to the use thereof for the production of thin metal-oxide layers. The latter are constituents in a very wide variety of electronic components and devices having various functions.
摘要:
An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.
摘要:
A film comprising a crystalline halide perovskite composition having the following formula: AMX3 (1) wherein: A is an organic cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, and guanidinium; M is at least one divalent metal; and X is independently selected from halide atoms; wherein the crystalline film of the halide perovskite composition possesses at least one of an average grain size of at least 30 microns, substantial crystal orientation evidenced in an ordering parameter of at least 0.6, and a level of crystallinity of at least 90%. Methods for producing films of these halide perovskite compositions using ionic liquids instead of volatile organic solvents are also described herein.
摘要:
A process of making an electrochromic or an electrolytic film by Ultrasonic Spray Pyrolysis (USP) deposition on a substrate comprising: mixing a surfactant to an aqueous precursor solution comprising an electrochromic component or an electrolytic component to provide a spray solution; introducing the spray solution into an ultrasonic spray deposition nozzle at a constant flow rate between 0.1 mL/min and 2 mL/min and applying an ultrasonic frequency between 80 and 120 kHz to generate atomized droplets of the precursor solution; entraining the atomized droplets with a controlled jet of air as gas carrier at a pressure between 0.50 to 2.0 psi, onto a pre-heated substrate at a temperature of 200 to 450° C.; thermally converting the atomized droplets when depositing onto the pre-heated substrate to generate an electrochromic or an electrolytic film.
摘要:
Molecular precursor compounds, processes and compositions for making Zn-Group 13 mixed oxide materials including IZO, GZO, AZO and BZO, by providing inks comprising a molecular precursor compound having the formula MAaZn(OROR)3a+2, and printing or depositing the inks on a substrate. The printed or deposited ink films can be treated to convert the molecular precursor compounds to a material.
摘要:
The present invention provides a process for depositing an oxide coating on an inorganic substrate, including providing an aqueous composition containing a tetraalkylammonium polyoxoanion and hydrogen peroxide; contacting the aqueous composition with an inorganic substrate for a time sufficient to deposit a hydroxide derived from the polyoxoanion on surfaces of the inorganic substrate to form an initially coated inorganic substrate; and heating the initially coated inorganic substrate for a time sufficient to convert the hydroxide to an oxide to form on the inorganic substrate an oxide coating derived from the polyoxoanion. The inorganic substrate may be a ceramic material or a semiconductor material, a glass or other dielectric material, and the ceramic material may be a lithium ion battery cathode material.
摘要:
The invention provides a process for producing a transparent conducting film, which film comprises a doped zinc oxide wherein the dopant comprises Si, which process comprises: disposing a composition which is a liquid composition or a gel composition onto a substrate, wherein the composition comprises Zn and Si; and heating said substrate. The invention further provides transparent conducting films obtainable by the process of the invention, including transparent conducting films which comprise a doped zinc oxide wherein the dopant comprises Si, and wherein the film covers a surface area equal to or greater than 0.01 m2. The invention also provides a coated substrate, which substrate comprises a surface, which surface is coated with a transparent conducting film, wherein the film comprises a doped zinc oxide wherein the dopant comprises Si, and wherein the area of said surface which is coated with said film is equal to or greater than 0.01 m2. The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.
摘要:
A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.
摘要:
The present invention relates to a zeolite coating preparation assembly (1) and operation method wherein zeolite adsorbents are coated by crystallization process on various surfaces heated by induction. The objective of the present invention is to provide a zeolite coating preparation assembly (1) and operation method; by which time saving is achieved owing to heating by induction, material saving is achieved since large heating resistances and complicated reactors are not used; and which is thus more economical; and wherein thicker and more stable coatings with high diffusion coefficients are prepared by using a more practical reaction system in a shorter period of time in comparison to the known methods, and wherein mass production is enabled.
摘要:
The present invention relates to a method for manufacturing a cable-type secondary battery comprising an electrode that extends longitudinally in a parallel arrangement and that includes a current collector having a horizontal cross section of a predetermined shape and an active material layer formed on the current collector, and the electrode is formed by putting an electrode slurry including an active material, a polymer binder, and a solvent into an extruder, by extrusion-coating the electrode slurry on the current collector while continuously providing the current collector to the extruder, and by drying the current collector coated with the electrode slurry to form an active material layer.