MAGNETIC FIELD SENSOR WITH PERPENDICULAR AXIS SENSITIVITY, COMPRISING A GIANT MAGNETORESISTANCE MATERIAL OF A SPIN TUNNEL JUNCTION
    1.
    发明申请
    MAGNETIC FIELD SENSOR WITH PERPENDICULAR AXIS SENSITIVITY, COMPRISING A GIANT MAGNETORESISTANCE MATERIAL OF A SPIN TUNNEL JUNCTION 失效
    磁场感应器,具有贯穿轴心灵敏度,包含旋转隧道接头的巨大磁阻材料

    公开(公告)号:US20010013776A1

    公开(公告)日:2001-08-16

    申请号:US09373430

    申请日:1999-08-13

    Abstract: It is proposed to make thin film magnetic field sensors with perpendicular axis sensitivity, based on a giant magnetoresistance material or a spin tunnel junction, by making use of ferromagnetic layers that have strongly different uniaxial anisotropies and/or have a modified magnetization curve by antiferromagnetic exchange coupling with an auxiliary ferromagnetic layer. A strongly miniaturizable magnetic field sensor is based on four spin tunnel junctions, together forming a Wheatstone bridge. The magnetically sensitive electrode functions as well as a laminated flux concentrator, resulting in a low noise single domain configuration. The very simple design also allows easy definition of the fixed magnetization direction of the counter electrode. Very high output voltage combined with very low power.

    Abstract translation: 提出通过利用具有强不同的单轴各向异性的铁磁层和/或通过反铁磁交换具有改进的磁化曲线来制造基于巨磁电阻材料或自旋隧道结的具有垂直轴灵敏度的薄膜磁场传感器 与辅助铁磁层耦合。 强大的可微型磁场传感器基于四个自旋隧道结,一起形成惠斯通电桥。 磁敏电极与层压式磁通集中器一起起作用,导致低噪声单域结构。 非常简单的设计还允许容易地定义对电极的固定磁化方向。 非常高的输出电压结合非常低的功率。

Patent Agency Ranking