公开(公告)号：US09957154B2

公开(公告)日：2018-05-01

申请号：US15320719

申请日：2015-07-07

Applicant: ULIS

Inventor： Jérôme Favier ,  David Bunel

IPC: H01L23/00 ,  H01L31/18 ,  B81B7/00 ,  B81C1/00 ,  G01J5/20

CPC classification number: B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0145 ,  B81C2203/019 ,  G01J5/20 ,  H01L23/564 ,  H01L31/186 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion.Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.

公开(公告)号：US20180215610A1

公开(公告)日：2018-08-02

申请号：US15928008

申请日：2018-03-21

Applicant: ULIS

Inventor： Jérôme Favier ,  David Bunel

IPC: B81B7/00 ,  G01J5/20 ,  H01L31/18 ,  H01L23/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0145 ,  B81C2203/019 ,  G01J5/20 ,  H01L23/564 ,  H01L31/186 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A device having a microelectronic component housed in a hermetically sealed housing having a vacuum inner space, and including a getter that substantially traps only hydrogen, is inert to oxygen and/or to nitrogen, and is housed in said inner space. Each of the constituent parts of the device being likely to degas into the inner space is a mineral material.

公开(公告)号：US20170137281A1

公开(公告)日：2017-05-18

申请号：US15320719

申请日：2015-07-07

Applicant: ULIS

Inventor： Jérôme Favier ,  David Bunel

IPC: B81B7/00 ,  G01J5/20 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0145 ,  B81C2203/019 ,  G01J5/20 ,  H01L23/564 ,  H01L31/186 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion.Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.