公开(公告)号：US09903012B2

公开(公告)日：2018-02-27

申请号：US14652423

申请日：2012-12-18

Applicant: ULVAC, INC.

Inventor： Takashi Yoshida ,  Masahiro Matsumoto ,  Noriaki Tani ,  Susumu Ikeda ,  Masashi Kubo

IPC: C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34

CPC classification number: C23C14/0036 ,  C23C14/0063 ,  C23C14/083 ,  C23C14/10 ,  C23C14/3464

Abstract: A film formation method is one for forming an organic layer comprising a fluorine-containing resin on an inorganic layer (3) formed on a substrate and comprising an inorganic substance. In the method, for the formation of the inorganic layer, a reactive sputtering procedure using water vapor as a reactive gas is carried out to form the inorganic layer on the substrate. Subsequently, the organic layer is formed on the inorganic layer. A film formation device enables the implementation of the film formation method.