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公开(公告)号:US20220302369A1
公开(公告)日:2022-09-22
申请号:US17239667
申请日:2021-04-25
Applicant: UNITED MICROELECTRONICS CORP.
Inventor: Hui-Lin Wang , Bo-Yun Huang , Wen-Wen Zhang , Kun-Chen Ho
Abstract: A magnetoresistive random access memory (MRAM) structure is provided in the present invention, including multiple MRAM cells, and an atomic layer deposition dielectric layer between and at outer sides of the MRAM cells, wherein the material of top electrode layer is titanium nitride, and the nitrogen percentage is greater than titanium percentage and further greater than oxygen percentage in the titanium nitride, and the nitrogen percentage gradually increases inward from the top surface of top electrode layer to a depth and then start to gradually decrease to a first level and then remains constant, and the titanium percentage gradually decreases inward from the top surface of top electrode layer to the depth and then start to gradually increase to a second level and then remains constant.
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公开(公告)号:US11882769B2
公开(公告)日:2024-01-23
申请号:US17239667
申请日:2021-04-25
Applicant: UNITED MICROELECTRONICS CORP.
Inventor: Hui-Lin Wang , Bo-Yun Huang , Wen-Wen Zhang , Kun-Chen Ho
Abstract: A magnetoresistive random access memory (MRAM) structure is provided in the present invention, including multiple MRAM cells, and an atomic layer deposition dielectric layer between and at outer sides of the MRAM cells, wherein the material of top electrode layer is titanium nitride, and the nitrogen percentage is greater than titanium percentage and further greater than oxygen percentage in the titanium nitride, and the nitrogen percentage gradually increases inward from the top surface of top electrode layer to a depth and then start to gradually decrease to a first level and then remains constant, and the titanium percentage gradually decreases inward from the top surface of top electrode layer to the depth and then start to gradually increase to a second level and then remains constant.
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