公开(公告)号：US20170222026A1

公开(公告)日：2017-08-03

申请号：US15014037

申请日：2016-02-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ren Chen ,  Shou-Wei Hsieh ,  Hsin-Yu Chen ,  Chun-Hao Lin ,  Yuan-Ting Chuang ,  Che-Hung Liu

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/28

CPC classification number: H01L29/66795 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/31111 ,  H01L29/66545 ,  H01L29/7847

Abstract: The present invention provides a method of fabricating a fin field effect transistor (finFET), comprising: firstly, an interfacial layer is formed on a fin structure, next, a high-k dielectric layer is formed on the interfacial layer; afterwards, a stress film is formed on the high-k dielectric layer, an annealing process is then performed to the stress film, and an etching process is performed to remove the stress film.