公开(公告)号：US20140106558A1

公开(公告)日：2014-04-17

申请号：US14144584

申请日：2013-12-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Wei Hsu ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Yen-Ming Chen ,  Chia-Hsi Chen ,  Chang-Hung Kung

IPC: H01L21/28

CPC classification number: H01L21/28008 ,  H01L21/28123 ,  H01L21/31053 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848

Abstract: A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate.

Abstract translation: 具有金属栅极的半导体器件包括具有形成在其中的至少一个金属栅极的至少一个金属栅极和分别位于该金属的两侧的至少一对辅助虚拟结构的基板，其中形成有多个浅沟槽隔离物（STI） 门和衬底上。