公开(公告)号：US20160133559A1

公开(公告)日：2016-05-12

申请号：US14537913

申请日：2014-11-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jui-Fa Lu ,  Chin-Chun Huang ,  Chun-Nien Chen

IPC: H01L23/528 ,  H01L29/423 ,  H01L21/768 ,  H01L21/22 ,  H01L49/02 ,  H01L27/06

CPC classification number: H01L29/42372 ,  H01L21/22 ,  H01L23/522 ,  H01L27/0617 ,  H01L27/0629 ,  H01L28/10 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure includes a substrate comprising a plurality of layers formed thereon, at least a first device formed in one of the layers formed thereon, a drawn region enclosing the first device, and a plurality of dummy structures in another layer. The dummy structures are formed in a first region correspondingly outside of the drawing region and in a second region correspondingly inside of the drawing region.

Abstract translation: 一种半导体结构，包括：在其上形成有多个层的至少第一器件，形成在其中的一个层中的第一器件，包围第一器件的引出区域，以及另一层中的多个虚设结构。 虚拟结构形成在对应于绘制区域外部的第一区域和对应于绘图区域内的第二区域中。