公开(公告)号：US09368365B1

公开(公告)日：2016-06-14

申请号：US14709488

申请日：2015-05-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Hsun Kuo ,  Ting-Cheng Tseng ,  Tan-Ya Yin ,  Chia-Wei Huang ,  Ming-Jui Chen

IPC: H01L21/30 ,  H01L21/308

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66795

Abstract: A manufacturing method for forming a semiconductor structure includes: first, a plurality of fin structures are formed on a substrate and arranged along a first direction, next, a first fin cut process is performed, so as to remove parts of the fin structures which are disposed within at least one first fin cut region, and a second fin cut process is then performed, so as to remove parts of the fin structures which are disposed within at least one second fin cut region, where the second fin cut region is disposed along at least one edge of the first fin cut region.

Abstract translation: 一种用于形成半导体结构的制造方法，其特征在于：首先，在基板上形成多个翅片结构，沿第一方向配置，接着，进行第一翅片切割加工， 设置在至少一个第一翅片切割区域内，然后执行第二翅片切割过程，以便去除设置在至少一个第二翅片切割区域内的翅片结构的部分，其中第二翅片切割区域沿着 第一鳍片切割区域的至少一个边缘。