公开(公告)号：US09524361B2

公开(公告)日：2016-12-20

申请号：US14690491

申请日：2015-04-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ting-Cheng Tseng ,  Ming-Jui Chen ,  Chia-Wei Huang

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F17/5081

Abstract: A method for decomposing a layout of an integrated circuit is provided. First, a layout of the integrated circuit is imported, wherein the layout comprises a plurality of sub patterns in a cell region, and a first direction and a second direction are defined thereon. Next, one sub pattern positioned at a corner of the cell region is assigned to an anchor pattern. Then, the sub patterns in the row same as the anchor pattern along the second direction is assigned to the first group. Finally, the rest of the sub patterns are decomposed into the first group and the second group according to a design rule, wherein the sub patterns in the same line are decomposed into the first group and the second group alternatively.

Abstract translation: 提供一种用于分解集成电路的布局的方法。 首先，导入集成电路的布局，其中布局包括单元区域中的多个子图案，并且在其上限定第一方向和第二方向。 接下来，将位于单元格区域的角落的一个子图案分配给锚图案。 然后，将与沿着第二方向的锚定图案相同的行中的子图案分配给第一组。 最后，根据设计规则，剩余的子图案被分解为第一组和第二组，其中同一行中的子图案被分解成第一组和第二组。

公开(公告)号：US20160306910A1

公开(公告)日：2016-10-20

申请号：US14690491

申请日：2015-04-20

Applicant: United Microelectronics Corp.

Inventor： Ting-Cheng Tseng ,  Ming-Jui Chen ,  Chia-Wei Huang

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F17/5081

Abstract: A method for decomposing a layout of an integrated circuit is provided. First, a layout of the integrated circuit is imported, wherein the layout comprises a plurality of sub patterns in a cell region, and a first direction and a second direction are defined thereon. Next, one sub pattern positioned at a corner of the cell region is assigned to an anchor pattern. Then, the sub patterns in the row same as the anchor pattern along the second direction is assigned to the first group. Finally, the rest of the sub patterns are decomposed into the first group and the second group according to a design rule, wherein the sub patterns in the same line are decomposed into the first group and the second group alternatively.

Abstract translation: 提供一种用于分解集成电路的布局的方法。 首先，导入集成电路的布局，其中布局包括单元区域中的多个子图案，并且在其上限定第一方向和第二方向。 接下来，将位于单元格区域的角落的一个子图案分配给锚图案。 然后，将与沿着第二方向的锚定图案相同的行中的子图案分配给第一组。 最后，根据设计规则，剩余的子图案被分解为第一组和第二组，其中同一行中的子图案被分解成第一组和第二组。

公开(公告)号：US20140258946A1

公开(公告)日：2014-09-11

申请号：US14287079

申请日：2014-05-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Fang Kuo ,  Ming-Jui Chen ,  Ting-Cheng Tseng ,  Cheng-Te Wang

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70466

Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.

Abstract translation: 用于双曝光处理的掩模组和使用所述掩模组的方法。 掩模组具有第一掩模图案，其具有第一基底和多个第一齿和突出部分，第二掩模图案具有第二基底和多个第二牙齿，其中第二基底可以至少部分地与 第一基座，使得每个突出部分至少部分地与第二齿中的一个齿重叠。

公开(公告)号：US09368365B1

公开(公告)日：2016-06-14

申请号：US14709488

申请日：2015-05-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Hsun Kuo ,  Ting-Cheng Tseng ,  Tan-Ya Yin ,  Chia-Wei Huang ,  Ming-Jui Chen

IPC: H01L21/30 ,  H01L21/308

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66795

Abstract: A manufacturing method for forming a semiconductor structure includes: first, a plurality of fin structures are formed on a substrate and arranged along a first direction, next, a first fin cut process is performed, so as to remove parts of the fin structures which are disposed within at least one first fin cut region, and a second fin cut process is then performed, so as to remove parts of the fin structures which are disposed within at least one second fin cut region, where the second fin cut region is disposed along at least one edge of the first fin cut region.

Abstract translation: 一种用于形成半导体结构的制造方法，其特征在于：首先，在基板上形成多个翅片结构，沿第一方向配置，接着，进行第一翅片切割加工， 设置在至少一个第一翅片切割区域内，然后执行第二翅片切割过程，以便去除设置在至少一个第二翅片切割区域内的翅片结构的部分，其中第二翅片切割区域沿着 第一鳍片切割区域的至少一个边缘。

公开(公告)号：US08741507B1

公开(公告)日：2014-06-03

申请号：US13742361

申请日：2013-01-16

Applicant: United Microelectronics Corp.

Inventor： Chun-Hsien Huang ,  Ming-Jui Chen ,  Chia-Wei Huang ,  Ting-Cheng Tseng

IPC: G03F1/70

CPC classification number: G03F1/70

Abstract: A method for separating photomask pattern, including the following steps: first, a layout pattern is provided, wherein the layout pattern is defined to have at least one critical pattern and at least one non-critical pattern. Then, a first split process is performed to separate the critical pattern into a plurality of first patterns and a plurality of second patterns. A second split process is performed to separate the non-critical pattern into a plurality of third patterns and a plurality of fourth patterns. Finally, the first patterns and the third patterns are output to a first photomask, and the second patterns and the fourth patterns are output to a second photomask.

Abstract translation: 一种用于分离光掩模图案的方法，包括以下步骤：首先，提供布局图案，其中布局图案被定义为具有至少一个关键图案和至少一个非关键图案。 然后，执行第一分割处理以将关键图案分离成多个第一图案和多个第二图案。 执行第二分割处理以将非关键图案分离成多个第三图案和多个第四图案。 最后，将第一图案和第三图案输出到第一光掩模，并将第二图案和第四图案输出到第二光掩模。

公开(公告)号：US09104833B2

公开(公告)日：2015-08-11

申请号：US14287079

申请日：2014-05-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Fang Kuo ,  Ming-Jui Chen ,  Ting-Cheng Tseng ,  Cheng-Te Wang

IPC: G03F1/00 ,  G06F17/50 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70466

Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.

Abstract translation: 用于双曝光处理的掩模组和使用所述掩模组的方法。 掩模组具有第一掩模图案，其具有第一基底和多个第一齿和突出部分，第二掩模图案具有第二基底和多个第二牙齿，其中第二基底可以至少部分地与 第一基座，使得每个突出部分至少部分地与第二齿中的一个齿重叠。

公开(公告)号：US20140256132A1

公开(公告)日：2014-09-11

申请号：US13787912

申请日：2013-03-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Wei Huang ,  Ming-Jui Chen ,  Ting-Cheng Tseng ,  Ping-I Hsieh

IPC: H01L21/308

CPC classification number: H01L21/308 ,  H01L27/1116

Abstract: A method for patterning a semiconductor structure is provided. The method comprises following steps. A first mask defining a first pattern in a first region and a second pattern in a second region adjacent to the first region is provided. The first pattern defined by the first mask is transferred to a first film structure in the first region, and the second pattern defined by the first mask is transferred to the first film structure in the second region. A second film structure is formed on the first film structure. A second mask defining a third pattern in the first region is provided. At least 50% of a part of the first region occupied by the first pattern defined by the first mask is identical with a part of the first region occupied by the third pattern defined by the second mask.

Abstract translation: 提供了一种图案化半导体结构的方法。 该方法包括以下步骤。 提供了在第一区域中限定第一图案的第一掩模和与第一区域相邻的第二区域中的第二图案。 由第一掩模限定的第一图案被转移到第一区域中的第一膜结构，并且由第一掩模限定的第二图案被转移到第二区域中的第一膜结构。 在第一膜结构上形成第二膜结构。 提供了在第一区域中限定第三图案的第二掩模。 由第一掩模限定的第一图案占据的第一区域的一部分的至少50％与由第二掩模限定的第三图案占据的第一区域的一部分相同。

公开(公告)号：US08822328B1

公开(公告)日：2014-09-02

申请号：US13787912

申请日：2013-03-07

Applicant: United Microelectronics Corp.

Inventor： Chia-Wei Huang ,  Ming-Jui Chen ,  Ting-Cheng Tseng ,  Ping-I Hsieh

IPC: H01L21/4763 ,  H01L21/302 ,  H01L21/308

CPC classification number: H01L21/308 ,  H01L27/1116

Abstract: A method for patterning a semiconductor structure is provided. The method comprises following steps. A first mask defining a first pattern in a first region and a second pattern in a second region adjacent to the first region is provided. The first pattern defined by the first mask is transferred to a first film structure in the first region, and the second pattern defined by the first mask is transferred to the first film structure in the second region. A second film structure is formed on the first film structure. A second mask defining a third pattern in the first region is provided. At least 50% of a part of the first region occupied by the first pattern defined by the first mask is identical with a part of the first region occupied by the third pattern defined by the second mask.

Abstract translation: 提供了一种图案化半导体结构的方法。 该方法包括以下步骤。 提供了在第一区域中限定第一图案的第一掩模和与第一区域相邻的第二区域中的第二图案。 由第一掩模限定的第一图案被转移到第一区域中的第一膜结构，并且由第一掩模限定的第二图案被转移到第二区域中的第一膜结构。 在第一膜结构上形成第二膜结构。 提供了在第一区域中限定第三图案的第二掩模。 由第一掩模限定的第一图案占据的第一区域的一部分的至少50％与由第二掩模限定的第三图案占据的第一区域的一部分相同。