公开(公告)号：US10747099B2

公开(公告)日：2020-08-18

申请号：US15986799

申请日：2018-05-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Pu Chen ,  Shu-Yen Liu ,  Tang-Chun Weng ,  Tuan-Yen Yu

IPC: G03F1/38 ,  G03F1/54 ,  G03F1/50 ,  H01L21/027

Abstract: The present invention provides a photomask, comprising: a substrate, a first region, a second region and a third region are defined thereon, wherein the third region is disposed between the first region and the second region, a patterned layer disposed on the substrate, wherein the patterned layer comprises a first patterned layer disposed in the first region, a second patterned layer disposed in the second region, and a third patterned layer disposed in the third region, and wherein a thickness of the first patterned layer is equal to a thickness of the second patterned layer, the thickness of the first patterned layer is different from a thickness of the third patterned layer, and at least one recess disposed in the third region.

公开(公告)号：US20150362905A1

公开(公告)日：2015-12-17

申请号：US14457136

申请日：2014-08-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chia-Chang Hsu ,  Teng-Chin Kuo ,  Chia-Hung Wang ,  Tuan-Yen Yu ,  Yuan-Chi Pai ,  Chun-Chi Yu

IPC: G05B19/18 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G03F1/42 ,  G03F7/70491 ,  G05B19/188 ,  G05B2219/45027 ,  G05B2219/45031

Abstract: A method of correcting an overlay error includes the following steps. First, an overlay mark disposed on a substrate is captured so as to generate overlay mark information. The overlay mark includes at least a pair of first mark patterns and at least a second mark pattern above the first mark patterns. Then, the overlay mark information is calculated to generate an offset value between two first mark patterns and to generate a shift value between the second mark pattern and one of the first mark patterns. Finally, the offset value is used to compensate the shift value so as to generate an amended shift value.

Abstract translation: 校正重叠错误的方法包括以下步骤。 首先，捕获设置在基板上的覆盖标记，以生成重叠标记信息。 覆盖标记包括至少一对第一标记图案和至少第一标记图案上方的第二标记图案。 然后，计算叠加标记信息以产生两个第一标记图案之间的偏移值，并产生第二标记图案与第一标记图案之一之间的偏移值。 最后，偏移值用于补偿偏移值，以产生修正的移位值。

公开(公告)号：US20190361339A1

公开(公告)日：2019-11-28

申请号：US15986799

申请日：2018-05-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Pu Chen ,  Shu-Yen Liu ,  Tang-Chun Weng ,  Tuan-Yen Yu

IPC: G03F1/38

Abstract: The present invention provides a photomask, comprising: a substrate, a first region, a second region and a third region are defined thereon, wherein the third region is disposed between the first region and the second region, a patterned layer disposed on the substrate, wherein the patterned layer comprises a first patterned layer disposed in the first region, a second patterned layer disposed in the second region, and a third patterned layer disposed in the third region, and wherein a thickness of the first patterned layer is equal to a thickness of the second patterned layer, the thickness of the first patterned layer is different from a thickness of the third patterned layer, and at least one recess disposed in the third region.

公开(公告)号：US20160306274A1

公开(公告)日：2016-10-20

申请号：US14685615

申请日：2015-04-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chia-Hsun Tseng ,  Tuan-Yen Yu ,  Po-Tsang Chen ,  Yi-Ting Chen

IPC: G03F1/76 ,  H01L21/033

CPC classification number: G03F1/76 ,  G03F1/54 ,  G03F1/58 ,  G03F1/70 ,  G03F1/72 ,  G03F1/80 ,  H01L21/0337

Abstract: A manufacturing method of a pattern transfer mask includes the following steps. A basic mask is provided. The basic mask includes a plurality of patterns formed by a patterned absorber layer on a substrate according to a first writing layout. A photolithographic process is then performed by the basic mask to obtain individual depth of focus (iDoF) ranges of each of the patterns and a usable depth of focus (UDoF) range of the patterns. At least one constrain pattern dominating the UDoF range is selected from the patterns in the basic mask. The rest of the patterns except the constrain pattern are non-dominating patterns. A second writing layout is then generated for reducing a thickness of the patterned absorber layer in the constrain pattern or in the non-dominating patterns.

Abstract translation: 图案转印掩模的制造方法包括以下步骤。 提供基本的面具。 基本掩模包括根据第一写入布局在基板上由图案化的吸收层形成的多个图案。 然后通过基本掩模执行光刻处理，以获得每种图案的单独焦点深度（iDoF）范围和图案的可用深度（UDoF）范围。 从基本掩码中的图案中选择至少一个主导UDoF范围的约束图案。 除了约束模式之外的其余模式是非主导模式。 然后生成第二写入布局以减小约束图案中的图案化吸收层的厚度或以非主导图案的方式。

公开(公告)号：US20140120476A1

公开(公告)日：2014-05-01

申请号：US13661050

申请日：2012-10-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tuan-Yen Yu ,  Yuan-Chi Pai ,  Chun-Chi Yu

IPC: G03F7/20

CPC classification number: G03F7/2041 ,  G03F7/11 ,  G03F7/38 ,  G03F7/40

Abstract: A method of forming a photoresist pattern, in which, a substrate is coated with a photoresist layer, an exposure process is performed on the photoresist layer to expose the photoresist layer, the photoresist layer is rinsed with a surfactant after the exposure process is performed, and the photoresist layer is post-exposure baked after the photoresist layer is rinsed with the surfactant.

Abstract translation: 在光致抗蚀剂层上进行形成光致抗蚀剂图案的方法，其中基板涂覆有光致抗蚀剂层，曝光处理以曝光光致抗蚀剂层，在曝光处理之后用表面活性剂冲洗光致抗蚀剂层， 在用表面活性剂冲洗光致抗蚀剂层之后，对光致抗蚀剂层进行后曝光烘烤。

公开(公告)号：US09581898B2

公开(公告)日：2017-02-28

申请号：US14685615

申请日：2015-04-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chia-Hsun Tseng ,  Tuan-Yen Yu ,  Po-Tsang Chen ,  Yi-Ting Chen

IPC: G03F1/76 ,  G03F1/80 ,  H01L21/033

CPC classification number: G03F1/76 ,  G03F1/54 ,  G03F1/58 ,  G03F1/70 ,  G03F1/72 ,  G03F1/80 ,  H01L21/0337

Abstract: A manufacturing method of a pattern transfer mask includes the following steps. A basic mask is provided. The basic mask includes a plurality of patterns formed by a patterned absorber layer on a substrate according to a first writing layout. A photolithographic process is then performed by the basic mask to obtain individual depth of focus (iDoF) ranges of each of the patterns and a usable depth of focus (UDoF) range of the patterns. At least one constrain pattern dominating the UDoF range is selected from the patterns in the basic mask. The rest of the patterns except the constrain pattern are non-dominating patterns. A second writing layout is then generated for reducing a thickness of the patterned absorber layer in the constrain pattern or in the non-dominating patterns.

Abstract translation: 图案转印掩模的制造方法包括以下步骤。 提供基本的面具。 基本掩模包括根据第一写入布局在基板上由图案化的吸收层形成的多个图案。 然后通过基本掩模执行光刻处理，以获得每种图案的单独焦点深度（iDoF）范围和图案的可用深度（UDoF）范围。 从基本掩码中的图案中选择至少一个主导UDoF范围的约束图案。 除了约束模式之外的其余模式是非主导模式。 然后生成第二写入布局以减小约束图案中的图案化吸收层的厚度或以非主导图案的方式。

公开(公告)号：US09400435B2

公开(公告)日：2016-07-26

申请号：US14457136

申请日：2014-08-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chia-Chang Hsu ,  Teng-Chin Kuo ,  Chia-Hung Wang ,  Tuan-Yen Yu ,  Yuan-Chi Pai ,  Chun-Chi Yu

IPC: G03F7/20 ,  G03F9/00 ,  G05B19/18 ,  G03F1/42

CPC classification number: G03F7/70633 ,  G03F1/42 ,  G03F7/70491 ,  G05B19/188 ,  G05B2219/45027 ,  G05B2219/45031

Abstract: A method of correcting an overlay error includes the following steps. First, an overlay mark disposed on a substrate is captured so as to generate overlay mark information. The overlay mark includes at least a pair of first mark patterns and at least a second mark pattern above the first mark patterns. Then, the overlay mark information is calculated to generate an offset value between two first mark patterns and to generate a shift value between the second mark pattern and one of the first mark patterns. Finally, the offset value is used to compensate the shift value so as to generate an amended shift value.

Abstract translation: 校正重叠错误的方法包括以下步骤。 首先，捕获设置在基板上的覆盖标记，以生成重叠标记信息。 覆盖标记包括至少一对第一标记图案和至少第一标记图案上方的第二标记图案。 然后，计算叠加标记信息以产生两个第一标记图案之间的偏移值，并产生第二标记图案与第一标记图案之一之间的偏移值。 最后，偏移值用于补偿偏移值，以产生修正的移位值。