公开(公告)号：US08927376B2

公开(公告)日：2015-01-06

申请号：US14260294

申请日：2014-04-24

Applicant: United Microelectronics Corp.

Inventor： Chin-I Liao ,  Teng-Chun Hsuan ,  Chin-Cheng Chien

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/02 ,  H01L29/165 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L29/165 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823412 ,  H01L21/823418 ,  H01L27/088 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method for forming epitaxial layer is disclosed. The method includes the steps of providing a semiconductor substrate, and forming an undoped first epitaxial layer in the semiconductor substrate. Preferably, the semiconductor substrate includes at least a recess, the undoped first epitaxial layer has a lattice constant, a bottom thickness, and a side thickness, in which the lattice constant is different from a lattice constant of the semiconductor substrate and the bottom thickness is substantially larger than or equal to the side thickness.

Abstract translation: 公开了一种用于形成外延层的方法。 该方法包括提供半导体衬底以及在半导体衬底中形成未掺杂的第一外延层的步骤。 优选地，半导体衬底至少包括凹部，未掺杂的第一外延层具有晶格常数，底部厚度和侧面厚度，其中晶格常数不同于半导体衬底的晶格常数，底部厚度为 基本上大于或等于侧厚度。

公开(公告)号：US20140235038A1

公开(公告)日：2014-08-21

申请号：US14260294

申请日：2014-04-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Teng-Chun Hsuan ,  Chin-Cheng Chien

IPC: H01L21/02

CPC classification number: H01L29/165 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823412 ,  H01L21/823418 ,  H01L27/088 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method for forming epitaxial layer is disclosed. The method includes the steps of providing a semiconductor substrate, and forming an undoped first epitaxial layer in the semiconductor substrate. Preferably, the semiconductor substrate includes at least a recess, the undoped first epitaxial layer has a lattice constant, a bottom thickness, and a side thickness, in which the lattice constant is different from a lattice constant of the semiconductor substrate and the bottom thickness is substantially larger than or equal to the side thickness.

Abstract translation: 公开了一种用于形成外延层的方法。 该方法包括提供半导体衬底以及在半导体衬底中形成未掺杂的第一外延层的步骤。 优选地，半导体衬底至少包括凹部，未掺杂的第一外延层具有晶格常数，底部厚度和侧面厚度，其中晶格常数不同于半导体衬底的晶格常数，底部厚度为 基本上大于或等于侧厚度。

公开(公告)号：US20140191285A1

公开(公告)日：2014-07-10

申请号：US14203581

申请日：2014-03-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Teng-Chun Hsuan ,  I-Ming Lai ,  Chin-Cheng Chien

IPC: H01L29/165

CPC classification number: H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device having epitaxial structures includes a gate structure positioned on a substrate, epitaxial structures formed in the substrate at two sides of the gate structure, and an undoped cap layer formed on the epitaxial structures. The epitaxial structures include a dopant. The epitaxial structures and the undoped cap layer include a first semiconductor material having a first lattice constant and a second semiconductor material having a second lattice constant. The second lattice constant is larger than the first lattice constant. The second semiconductor material in the epitaxial structure includes a first concentration and the second semiconductor material in the undoped cap layer includes a second concentration. The second concentration is lower than the first concentration, and is upwardly decreased.

Abstract translation: 具有外延结构的半导体器件包括位于衬底上的栅极结构，在栅极结构的两侧形成在衬底中的外延结构，以及形成在外延结构上的未掺杂的帽层。 外延结构包括掺杂剂。 外延结构和未掺杂的帽层包括具有第一晶格常数的第一半导体材料和具有第二晶格常数的第二半导体材料。 第二晶格常数大于第一晶格常数。 外延结构中的第二半导体材料包括第一浓度，未掺杂帽层中的第二半导体材料包括第二浓度。 第二浓度低于第一浓度，并且向上减少。