公开(公告)号：US20180151666A1

公开(公告)日：2018-05-31

申请号：US15362771

申请日：2016-11-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tri-Rung Yew ,  Hung-Chan Lin ,  Li-Wei Feng ,  Chien-Ting Ho ,  Chia-Lung Chang

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L27/108

CPC classification number: H01L28/82 ,  H01L21/31111 ,  H01L21/32051 ,  H01L27/10852

Abstract: A method of fabricating a metal-insulator-metal capacitor includes providing a dielectric layer. The dielectric layer is etched to form a first hole including a first convex profile bulging into the dielectric layer. Subsequently, the dielectric layer is etched to form a second hole including a second convex profile bulging into the dielectric layer. A first metal layer is formed to conformally cover the capacitor trench. An insulating layer is formed to cover the first metal layer. Finally, a second metal layer is formed covering the insulating layer.

公开(公告)号：US10079277B2

公开(公告)日：2018-09-18

申请号：US15362771

申请日：2016-11-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tri-Rung Yew ,  Hung-Chan Lin ,  Li-Wei Feng ,  Chien-Ting Ho ,  Chia-Lung Chang

IPC: H01L21/20 ,  H01L49/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L27/108

CPC classification number: H01L28/82 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32051 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A method of fabricating a metal-insulator-metal capacitor includes providing a dielectric layer. The dielectric layer is etched to form a first hole including a first convex profile bulging into the dielectric layer. Subsequently, the dielectric layer is etched to form a second hole including a second convex profile bulging into the dielectric layer. A first metal layer is formed to conformally cover the capacitor trench. An insulating layer is formed to cover the first metal layer. Finally, a second metal layer is formed covering the insulating layer.