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    CAPACITOR STRUCTURES WITH EMBEDDED ELECTRODES AND FABRICATION METHODS THEREOF
    7.
    发明申请
    CAPACITOR STRUCTURES WITH EMBEDDED ELECTRODES AND FABRICATION METHODS THEREOF 有权
    具有嵌入式电极的电容器结构及其制造方法

    公开(公告)号：US20170040110A1

    公开(公告)日：2017-02-09

    申请号：US14818342

    申请日：2015-08-05

    申请人： GLOBALFOUNDRIES Inc.

    发明人： Hui ZANG ,  Min-hwa CHI

    IPC分类号： H01G4/012 ,  H01G4/30

    CPC分类号： H01G4/012 ,  H01G4/306 ,  H01G4/33 ,  H01L23/5222 ,  H01L28/82 ,  H01L28/90

    摘要： Capacitor structures having first electrodes at least partially embedded within a second electrode, and fabrication methods are presented. The methods include, for instance: providing the first electrodes at least partially within an insulator layer, the first electrodes comprising exposed portions; covering exposed portions of the first electrodes with a dielectric material; and forming the second electrode at least partially around the dielectric covered portions of the first electrodes, the second electrode being physically separated from the first electrodes by the dielectric material. In one embodiment, a method further includes exposing further portions of the first electrodes; and providing a contact structure in electrical contact with the further exposed portions of the first electrodes. In another embodiment, some of the first electrodes are aligned substantially parallel to a first direction and other of the first electrodes are aligned substantially parallel to a second direction, the first and second directions being different directions.

    摘要翻译： 具有至少部分地嵌入在第二电极内的第一电极的电容器结构以及制造方法。 所述方法包括例如：至少部分地在绝缘体层内提供第一电极，第一电极包括暴露部分; 用介电材料覆盖第一电极的暴露部分; 以及至少部分地围绕所述第一电极的所述电介质覆盖部分形成所述第二电极，所述第二电极通过所述电介质材料与所述第一电极物理分离。 在一个实施例中，一种方法还包括暴露第一电极的另外部分; 以及提供与第一电极的另外的暴露部分电接触的接触结构。 在另一个实施例中，一些第一电极基本上平行于第一方向排列，而另一些第一电极基本上平行于第二方向排列，第一和第二方向是不同的方向。

    CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
    9.
    发明申请
    CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME 有权
    电容器结构，分解结构和包括其中的半导体器件

    公开(公告)号：US20160073502A1

    公开(公告)日：2016-03-10

    申请号：US14732278

    申请日：2015-06-05

    申请人： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

    发明人： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

    IPC分类号： H05K1/16

    CPC分类号： H01L28/90 ,  H01L27/0805 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10847 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/88 ,  H01L28/92

    摘要： Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

    摘要翻译： 提供去耦结构。 去耦结构可以包括第一导电图案，第二导电图案和结构上支撑第一导电图案和第二导电图案的整体支撑结构。 去耦结构还可以包括设置在第一导电图案之间和第二导电图案之间的公共电极。 第一导电图案和公共电极是第一电容器的电极，第二导电图案和公共电极是第二电容器的电极。 从平面图看，整体支撑结构可以包括开口。 第一导电图案和第二导电图案在其间具有分离区域彼此水平间隔开，并且没有一个开口延伸到分离区域中。

    Planar interdigitated capacitor structures and methods of forming the same
    10.
    发明授权
    Planar interdigitated capacitor structures and methods of forming the same 有权
    平面交叉电容器结构及其形成方法

    公开(公告)号：US09224800B2

    公开(公告)日：2015-12-29

    申请号：US14049268

    申请日：2013-10-09

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Hsiu-Ying Cho

    IPC分类号： H01L49/02 ,  H01L23/522

    CPC分类号： H01L28/82 ,  H01L23/5223 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A planar interdigitated capacitor structure, methods of forming, and devices including, the same. The device includes first and second planar electrode structures including respective first and second pluralities of planar continuous rectangular plate electrode elements formed above a semiconductor substrate and extending continuously in first and second orthogonal directions substantially parallel to a plane of the substrate, and first and second conductors interconnecting the respective first and second pluralities of planar electrode elements parallel to a third axis substantially normal to the plane of the substrate. The first and second planar electrode structures are arranged with respective continuous rectangular plate electrode elements of each planar electrode structure interleaved and substantially parallel with each other between the first and second conductors. The device also includes a dielectric material between the first planar electrode structure and the second planar electrode structure.

    摘要翻译： 平面交叉电容器结构，形成方法和包括其的器件。 该器件包括第一和第二平面电极结构，其包括形成在半导体衬底之上并且基本上平行于衬底的平面的第一和第二正交方向上连续延伸的相应的第一和第二多个平面连续矩形板电极元件，以及第一和第二导体 将相应的第一和第二多个平面电极元件平行于基本上垂直于衬底平面的第三轴互相连接。 第一和第二平面电极结构被布置成每个平面电极结构的连续的矩形板电极元件在第一和第二导体之间交错并基本上彼此平行。 该装置还包括在第一平面电极结构和第二平面电极结构之间的电介质材料。