公开(公告)号：US09583641B1

公开(公告)日：2017-02-28

申请号：US14960453

申请日：2015-12-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Hsiang Chang ,  Yi-Shan Chiu ,  Chih-Chien Chang ,  Jianjun Yang ,  Wen-Chuan Chang

IPC: H01L29/792 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7923 ,  H01L21/28282 ,  H01L27/11573 ,  H01L29/42344 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66833

Abstract: A manufacturing method of a semiconductor device includes the following steps. A plurality of select gates are formed on a memory region of a semiconductor substrate. Two charge storage structures are formed between two adjacent select gates. A source region is formed in the semiconductor substrate, and the source region is formed between the two adjacent select gates. An insulation block is formed between the two charge storage structures and formed on the source region. A memory gate is formed on the insulation block, and the memory gate is connected to the two charge storage structures.

Abstract translation: 半导体器件的制造方法包括以下步骤。 多个选择栅极形成在半导体衬底的存储区域上。 在两个相邻的选择门之间形成两个电荷存储结构。 源区域形成在半导体衬底中，并且源区域形成在两个相邻的选择栅极之间。 在两个电荷存储结构之间形成绝缘块并形成在源极区上。 存储器栅极形成在绝缘块上，并且存储器栅极连接到两个电荷存储结构。