公开(公告)号：US20160336194A1

公开(公告)日：2016-11-17

申请号：US14711752

申请日：2015-05-13

Applicant: United Microelectronics Corp.

Inventor： Chiu-Hsien Yeh ,  Zhen Wu ,  Yen-Cheng Chang ,  Yu-Ting Tseng

IPC: H01L21/321 ,  H01L21/308 ,  H01L21/8238 ,  H01L21/283

CPC classification number: H01L21/823821 ,  H01L21/02041 ,  H01L21/28088 ,  H01L21/31133 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A method of forming a semiconductor device includes following steps. First of all, a first work function layer is formed on a substrate. Next, a first patterned photoresist layer is formed on the first work function layer. Then, the first work function layer is partially removed by using the first patterned photoresist layer as a mask to form a patterned first work function layer. Subsequently, the first patterned photoresist layer is removed by providing radical oxygen.

Abstract translation: 形成半导体器件的方法包括以下步骤。 首先，在基板上形成第一功函数层。 接下来，在第一功函数层上形成第一图案化光致抗蚀剂层。 然后，通过使用第一图案化的光致抗蚀剂层作为掩模来部分去除第一功函数层以形成图案化的第一功函数层。 随后，通过提供自由基氧来除去第一图案化的光致抗蚀剂层。

公开(公告)号：US09685383B2

公开(公告)日：2017-06-20

申请号：US14711752

申请日：2015-05-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chiu-Hsien Yeh ,  Zhen Wu ,  Yen-Cheng Chang ,  Yu-Ting Tseng

IPC: H01L21/321 ,  H01L21/283 ,  H01L21/308 ,  H01L21/8238 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/823821 ,  H01L21/02041 ,  H01L21/28088 ,  H01L21/31133 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A method of forming a semiconductor device includes following steps. First of all, a first work function layer is formed on a substrate. Next, a first patterned photoresist layer is formed on the first work function layer. Then, the first work function layer is partially removed by using the first patterned photoresist layer as a mask to form a patterned first work function layer. Subsequently, the first patterned photoresist layer is removed by providing radical oxygen.