公开(公告)号：US11791386B2

公开(公告)日：2023-10-17

申请号：US17895054

申请日：2022-08-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/76 ,  H01L31/062 ,  H01L29/94 ,  H01L29/40 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/404 ,  H01L27/088 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20220406904A1

公开(公告)日：2022-12-22

申请号：US17895066

申请日：2022-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/40 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US11798998B2

公开(公告)日：2023-10-24

申请号：US17895042

申请日：2022-08-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/76 ,  H01L31/062 ,  H01L29/94 ,  H01L29/40 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/404 ,  H01L27/088 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20220406902A1

公开(公告)日：2022-12-22

申请号：US17895042

申请日：2022-08-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/40 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US11804526B2

公开(公告)日：2023-10-31

申请号：US17895066

申请日：2022-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/76 ,  H01L31/062 ,  H01L29/94 ,  H01L29/40 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/404 ,  H01L27/088 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20220406903A1

公开(公告)日：2022-12-22

申请号：US17895054

申请日：2022-08-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/40 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US11462621B2

公开(公告)日：2022-10-04

申请号：US17200908

申请日：2021-03-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/76 ,  H01L31/062 ,  H01L29/40 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20220254888A1

公开(公告)日：2022-08-11

申请号：US17200908

申请日：2021-03-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/40 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.