公开(公告)号：US11791386B2

公开(公告)日：2023-10-17

申请号：US17895054

申请日：2022-08-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/76 ,  H01L31/062 ,  H01L29/94 ,  H01L29/40 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/404 ,  H01L27/088 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20220406904A1

公开(公告)日：2022-12-22

申请号：US17895066

申请日：2022-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/40 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20150060980A1

公开(公告)日：2015-03-05

申请号：US14010611

申请日：2013-08-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ze-Wei Jhou ,  Ching-Chung Yang

IPC: H01L29/788 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7889 ,  H01L27/11519 ,  H01L27/11558 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7831 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/7885

Abstract: A programmable device and a method of manufacturing the same are provided. A programmable device comprises a substrate having a source region, a drain region and a diffusion region adjacent to the source region and the drain region; a channel coupling the source region and the drain region; a floating gate formed of a conductive material and positioned on the substrate and corresponding to the channel; and a trench formed in the diffusion region at the substrate, wherein the floating gate extends to the trench, and the conductive material covers a sidewall of the trench.

Abstract translation: 提供了一种可编程装置及其制造方法。 可编程器件包括具有源极区，漏极区和邻近源极区和漏极区的扩散区的衬底; 耦合源极区和漏极区的沟道; 由导电材料形成并位于衬底上并对应于沟道的浮动栅; 以及形成在所述基板的所述扩散区域中的沟槽，其中所述浮栅延伸到所述沟槽，并且所述导电材料覆盖所述沟槽的侧壁。

公开(公告)号：US11798998B2

公开(公告)日：2023-10-24

申请号：US17895042

申请日：2022-08-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/76 ,  H01L31/062 ,  H01L29/94 ,  H01L29/40 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/404 ,  H01L27/088 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20220406902A1

公开(公告)日：2022-12-22

申请号：US17895042

申请日：2022-08-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/40 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US09029932B2

公开(公告)日：2015-05-12

申请号：US14010611

申请日：2013-08-27

Applicant: United Microelectronics Corp.

Inventor： Ze-Wei Jhou ,  Ching-Chung Yang

IPC: H01L29/788 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7889 ,  H01L27/11519 ,  H01L27/11558 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7831 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/7885

Abstract: A programmable device and a method of manufacturing the same are provided. A programmable device comprises a substrate having a source region, a drain region and a diffusion region adjacent to the source region and the drain region; a channel coupling the source region and the drain region; a floating gate formed of a conductive material and positioned on the substrate and corresponding to the channel; and a trench formed in the diffusion region at the substrate, wherein the floating gate extends to the trench, and the conductive material covers a sidewall of the trench.

Abstract translation: 提供了一种可编程装置及其制造方法。 可编程器件包括具有源极区，漏极区和邻近源极区和漏极区的扩散区的衬底; 耦合源极区和漏极区的沟道; 由导电材料形成并位于衬底上并对应于沟道的浮动栅; 以及形成在所述基板的所述扩散区域中的沟槽，其中所述浮栅延伸到所述沟槽，并且所述导电材料覆盖所述沟槽的侧壁。

公开(公告)号：US11804526B2

公开(公告)日：2023-10-31

申请号：US17895066

申请日：2022-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/76 ,  H01L31/062 ,  H01L29/94 ,  H01L29/40 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/404 ,  H01L27/088 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20220406903A1

公开(公告)日：2022-12-22

申请号：US17895054

申请日：2022-08-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/40 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US11462621B2

公开(公告)日：2022-10-04

申请号：US17200908

申请日：2021-03-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/76 ,  H01L31/062 ,  H01L29/40 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

公开(公告)号：US20220254888A1

公开(公告)日：2022-08-11

申请号：US17200908

申请日：2021-03-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chieh Wang ,  Po-Chun Lai ,  Ke-Feng Lin ,  Chen-An Kuo ,  Ze-Wei Jhou

IPC: H01L29/40 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.