公开(公告)号：US10651235B1

公开(公告)日：2020-05-12

申请号：US16296225

申请日：2019-03-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ting Wu ,  Jhen-Siang Wu ,  Po-Chun Yang ,  Yung-Ching Hsieh ,  Zong-Sheng Zheng ,  Jian-Jhong Chen ,  Jen-Yu Wang ,  Cheng-Tung Huang

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/08

Abstract: A first MRAM set includes a first transistor and a second transistor. The first transistor includes a first gate structure, a first source/drain doping region and a first common source/drain doping region. The second transistor includes a second gate structure, a second source/drain doping region and the first common source/drain doping region. A second MTJ is disposed on the second transistor. The first common source/drain doping region electrically connects to the second MTJ. A first MTJ is disposed on the first transistor. The sizes of the first MTJ and the second MTJ are different. The second MTJ connects to the first MTJ in series. A bit line electrically connects the first MTJ. A source line electrically connects to the first source/drain doping region and the second source/drain doping region.