公开(公告)号：US09230954B1

公开(公告)日：2016-01-05

申请号：US14716925

申请日：2015-05-20

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chi-Hong Wu

IPC: H01L23/62 ,  H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L27/0266 ,  H01L23/485 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a LDNMOS device for an ESD protection structure, by means of disposing a metal portion above the isolation portion and overlapping thereof, so as to protect the internal device from ESD more completely, comprising: a substrate; an ILD; a deep N-well region; a P-body region; a doped region, the doped region defines a diffusion area on the top thereof; a Poly gate electrode; an isolation structure disposed between the Poly gate electrode and the doped region; a contact portion connecting to the diffusion area of the doped region; and a metal portion disposed above the doped region, connecting to the contact portion. Wherein there is an overlap between the isolation structure and the metal portion, the direction of the overlap is parallel to the direction of channel length.

Abstract translation: 本发明提供了一种用于ESD保护结构的LDNMOS器件，其通过在隔离部分上方设置金属部分并与其重叠，以便更完全地保护内部器件免于ESD，包括：衬底; ILD; 深N井区; P体区域; 掺杂区域，掺杂区域在其顶部限定扩散区域; 多栅电极; 设置在所述多晶硅栅极和所述掺杂区域之间的隔离结构; 连接到掺杂区域的扩散区域的接触部分; 以及设置在掺杂区域上方的金属部分，连接到接触部分。 其中隔离结构和金属部分之间存在重叠，重叠的方向平行于沟道长度方向。