公开(公告)号：US09735015B1

公开(公告)日：2017-08-15

申请号：US15369878

申请日：2016-12-05

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Kun Ju Li ,  Hsin Jung Liu ,  Wei-Chuan Tsai ,  Min-Chuan Tsai ,  Yi Han Liao ,  Chun-Tsen Lu ,  Chun-Lin Chen ,  Jui-Ming Yang ,  Kuo-Chin Hung

IPC: H01L21/00 ,  H01L21/28 ,  H01L29/66 ,  H01L29/49 ,  H01L21/321 ,  H01L21/8234

CPC classification number: H01L21/28123 ,  H01L21/28079 ,  H01L21/3212 ,  H01L21/823456 ,  H01L29/495 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor structure, comprising: providing a preliminary structure having a first region and a second region and comprising a plurality of first trenches in the first region; forming a metal layer filling the first trenches covering on the preliminary structure, wherein the metal layer comprises a concave portion in the second region and the concave portion defines an opening; forming a metal nitride layer on the metal layer by an nitride treatment; and performing a planarization process to remove the metal nitride layer and a portion of the metal layer to expose the preliminary structure.