公开(公告)号：US09443970B2

公开(公告)日：2016-09-13

申请号：US14924734

申请日：2015-10-28

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Hsin-Ming Hou ,  Yu-Cheng Tung ,  Ji-Fu Kung ,  Wai-Yi Lien ,  Ming-Tsung Chen

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/762 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L21/76224 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device including a substrate, a plurality of isolation structures, at least a gate structure, a plurality of dummy gate structures and a plurality of epitaxial structures is provided. The substrate has an active area defined by the isolation structures disposed within the substrate. That is, the active area is defined between the isolation structures. The gate structure is disposed on the substrate and located within the active area. The dummy gate structures are disposed on the substrate and located out of the active area. The edge of each dummy gate structure is separated from the boundary of the active area with a distance smaller than 135 angstroms. The epitaxial structures are disposed within the active area and in a portion of the substrate on two sides of the gate structure. The invention also provided a method for fabricating semiconductor device.

Abstract translation: 提供了包括衬底，多个隔离结构，至少栅极结构，多个虚拟栅极结构和多个外延结构的半导体器件。 衬底具有由设置在衬底内的隔离结构限定的有源区域。 也就是说，在隔离结构之间限定有源区。 栅极结构设置在基板上并且位于有源区域内。 虚拟栅极结构设置在基板上并且位于有源区域之外。 每个虚拟栅极结构的边缘与有效区域的边界分开，距离小于135埃。 外延结构被布置在栅极结构的两侧的有源区域内和衬底的一部分中。 本发明还提供了一种制造半导体器件的方法。