公开(公告)号：US09312121B1

公开(公告)日：2016-04-12

申请号：US14511092

申请日：2014-10-09

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yi-Hui Lee ,  Tsung-Hung Chang ,  Ching-Wen Hung ,  Jia-Rong Wu ,  Ching-Ling Lin ,  Chih-Sen Huang ,  Yi-Wei Chen ,  Chia-Chang Hsu ,  Shu-Min Huang ,  Hsin-Fu Huang

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855

Abstract: The method for cleaning a contact hole and forming a contact plug therein is provided. The method includes steps of: providing a silicon substrate; forming a contact hole in the silicon substrate; performing a pre-cleaning process to clean the contact hole; and forming a contact plug in the contact hole. The pre-cleaning process includes steps of: performing an oxide dry etching process; performing a first thermal annealing process with a temperature which is equal to or greater than 300° C.; performing a degassing process with a temperature which is equal to or greater than 300° C.; and performing an Ar-plasma etching process.

Abstract translation: 提供了用于清洁接触孔并形成接触插塞的方法。 该方法包括以下步骤：提供硅衬底; 在硅衬底中形成接触孔; 执行预清洁处理以清洁接触孔; 并在接触孔中形成接触塞。 预清洗工艺包括以下步骤：进行氧化干蚀刻工艺; 执行温度等于或大于300℃的第一热退火工艺; 以等于或大于300℃的温度进行脱气处理; 并进行Ar等离子体蚀刻处理。