公开(公告)号：US09312121B1

公开(公告)日：2016-04-12

申请号：US14511092

申请日：2014-10-09

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yi-Hui Lee ,  Tsung-Hung Chang ,  Ching-Wen Hung ,  Jia-Rong Wu ,  Ching-Ling Lin ,  Chih-Sen Huang ,  Yi-Wei Chen ,  Chia-Chang Hsu ,  Shu-Min Huang ,  Hsin-Fu Huang

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855

Abstract: The method for cleaning a contact hole and forming a contact plug therein is provided. The method includes steps of: providing a silicon substrate; forming a contact hole in the silicon substrate; performing a pre-cleaning process to clean the contact hole; and forming a contact plug in the contact hole. The pre-cleaning process includes steps of: performing an oxide dry etching process; performing a first thermal annealing process with a temperature which is equal to or greater than 300° C.; performing a degassing process with a temperature which is equal to or greater than 300° C.; and performing an Ar-plasma etching process.

Abstract translation: 提供了用于清洁接触孔并形成接触插塞的方法。 该方法包括以下步骤：提供硅衬底; 在硅衬底中形成接触孔; 执行预清洁处理以清洁接触孔; 并在接触孔中形成接触塞。 预清洗工艺包括以下步骤：进行氧化干蚀刻工艺; 执行温度等于或大于300℃的第一热退火工艺; 以等于或大于300℃的温度进行脱气处理; 并进行Ar等离子体蚀刻处理。

公开(公告)号：US20150050799A1

公开(公告)日：2015-02-19

申请号：US13969616

申请日：2013-08-19

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Bor-Shyang Liao ,  Tsung-Hsun Tsai ,  Kuo-Chih Lai ,  Pin-Hong Chen ,  Chia-Chang Hsu ,  Shu-Min Huang ,  Min-Chung Cheng ,  Chun-Ling Lin

IPC: H01L21/322 ,  H01L21/283

CPC classification number: H01L21/283 ,  H01L21/28123 ,  H01L21/28518 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7833 ,  H01L29/7834

Abstract: A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (PO-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括以下步骤。 首先，提供具有氮化物层和含铂（含PO的镍（Ni） - 半导体化合物层）的基板，然后用包含硫酸成分和磷酸的化学溶液原位除去氮化物层和Pt 零件。

公开(公告)号：US09318338B2

公开(公告)日：2016-04-19

申请号：US13969616

申请日：2013-08-19

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Bor-Shyang Liao ,  Tsung-Hsun Tsai ,  Kuo-Chih Lai ,  Pin-Hong Chen ,  Chia-Chang Hsu ,  Shu-Min Huang ,  Min-Chung Cheng ,  Chun-Ling Lin

IPC: H01L21/322 ,  H01L21/283 ,  H01L21/28 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/285

CPC classification number: H01L21/283 ,  H01L21/28123 ,  H01L21/28518 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7833 ,  H01L29/7834

Abstract: A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (Pt)-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括以下步骤。 首先，提供具有氮化物层和含铂（Pt）的镍（Ni） - 半导体化合物层的衬底。 然后用包含硫酸组分和磷酸组分的化学溶液原位除去氮化物层和Pt。