公开(公告)号：US20190027358A1

公开(公告)日：2019-01-24

申请号：US16137583

申请日：2018-09-21

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： YAN-DA CHEN ,  WENG YI CHEN ,  CHANG-SHENG HSU ,  KUAN-YU WANG ,  YUAN SHENG LIN

IPC: H01L21/02 ,  B81C1/00

Abstract: Provided herein is a method for manufacturing a semiconductor device. A substrate including a MEMS region and a connection region thereon is provided; a dielectric layer disposed on the substrate in the connection region is provided; a poly-silicon layer disposed on the dielectric layer is provided, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer is provided; and a passivation layer covering the dielectric layer is provided, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer, and a conductive layer conformally covering the connection pad and the poly-silicon layer in the transition region is provided.

公开(公告)号：US20160355398A1

公开(公告)日：2016-12-08

申请号：US14731433

申请日：2015-06-05

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： YAN-DA CHEN ,  WENG YI CHEN ,  CHANG-SHENG HSU ,  KUAN-YU WANG ,  YUAN SHENG LIN

IPC: B81C1/00 ,  B81B7/00 ,  B81B3/00

CPC classification number: H01L21/02107 ,  B81B2207/015 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/016

Abstract: Provided herein is a semiconductor device is provided. The semiconductor device includes a substrate including a MEMS region and a connection region thereon; a dielectric layer disposed on the substrate in the connection region; a poly-silicon layer disposed on the dielectric layer, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer; and a passivation layer covering the dielectric layer, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer.

Abstract translation: 本文提供了一种半导体器件。 半导体器件包括：衬底，其包括MEMS区域及其上的连接区域; 设置在所述连接区域中的所述基板上的电介质层; 设置在所述电介质层上的多晶硅层，其中所述多晶硅层用作蚀刻停止层; 设置在所述多晶硅层上的连接焊盘; 以及覆盖所述电介质层的钝化层，其中所述钝化层包括暴露所述连接焊盘的开口和所述连接焊盘与所述钝化层之间的过渡区域。