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    Bipolar transistor type MEMS pressure sensor and preparation method thereof
    1.
    发明授权
    Bipolar transistor type MEMS pressure sensor and preparation method thereof 有权

    公开(公告)号：US11965797B1

    公开(公告)日：2024-04-23

    申请号：US18372687

    申请日：2023-09-25

    申请人： Wuxi Sencoch Semiconductor Co., Ltd.

    发明人： Tongqing Liu

    IPC分类号： G01L9/06 ,  B81C1/00

    CPC分类号： G01L9/065 ,  B81C1/00539 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2201/0171

    摘要： The present disclosure discloses a bipolar transistor type MEMS pressure sensor and a preparation method thereof. The bipolar transistor type MEMS pressure sensor includes a thin film, a cantilever beam and a bipolar transistor. The bipolar transistor includes a base region, a collector region and an emitter region. The base region is configured to sense deformation of the thin film through a change in resistance value. For the bipolar transistor type MEMS pressure sensor of the disclosure, sensitivity of the sensor can be effectively improved without changing the performance indicators such as the measurement range and nonlinearity. Meanwhile, the bipolar transistor is used as a pressure-sensitive element, so that temperature drift of the sensor can be effectively inhibited.

    PASSIVATED MICROELECTROMECHANICAL STRUCTURES AND METHODS
    6.
    发明申请
    PASSIVATED MICROELECTROMECHANICAL STRUCTURES AND METHODS 有权
    经济微电子结构与方法

    公开(公告)号：US20160091713A1

    公开(公告)日：2016-03-31

    申请号：US14502255

    申请日：2014-09-30

    申请人： PIXTRONIX, INC.

    发明人： Teruo Sasagawa

    IPC分类号： G02B26/02 ,  G09G5/10 ,  B81C1/00

    CPC分类号： G02B26/02 ,  B81B2201/047 ,  B81C1/00039 ,  B81C1/00142 ,  B81C1/0015 ,  B81C1/00952 ,  B81C2201/013 ,  B81C2201/016 ,  G02B26/0841 ,  G02B26/0858 ,  G09G3/3433 ,  G09G5/10 ,  G09G2300/04

    摘要： This disclosure provides systems, methods and apparatus including devices that include a layer of passivation material covering at least a portion of an exterior surface of a thin film component within a microelectomechanical device. The thin film component may include an electrically conductive layer that connects via an anchor to a conductive surface on a substrate. The disclosure further provides processes for providing a layer of passivation material on an exterior surface of a thin film component and for electrically connecting that thin film component to a conductive surface on a substrate.

    摘要翻译： 本公开提供了包括装置的系统，方法和装置，其包括覆盖微机电装置内的薄膜部件的外表面的至少一部分的钝化材料层。 薄膜部件可以包括通过锚固件连接到基板上的导电表面的导电层。 本公开还提供了在薄膜部件的外表面上提供钝化材料层并将该薄膜部件电连接到基板上的导电表面的方法。

    Passivation layer for harsh environments and methods of fabrication thereof
    7.
    发明授权
    Passivation layer for harsh environments and methods of fabrication thereof 有权
    用于恶劣环境的钝化层及其制造方法

    公开(公告)号：US09233842B2

    公开(公告)日：2016-01-12

    申请号：US14201247

    申请日：2014-03-07

    申请人： Robert Bosch GmbH

    发明人： Ando Lars Feyh ,  Fabian Purkl ,  Andrew Graham ,  Gary Yama

    IPC分类号： H01L21/31 ,  B81C1/00 ,  H01L23/31 ,  H01L21/314 ,  H01L45/00 ,  H01L21/02

    CPC分类号： B81C1/00809 ,  B81C2201/016 ,  H01L21/02601 ,  H01L23/3192 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of fabricating a passivation layer and a passivation layer for an electronic device. The passivation layer includes at least one passivation film layer and at least one nanoparticle layer. A first film layer is formed of an insulating matrix, such as aluminum oxide (Al2O3) and a first layer of a noble metal nanoparticle layer, such as a platinum nanoparticle layer, is deposited on the first film layer. Additional layers are formed of alternating film layers and nanoparticle layers. The resulting passivation layer provides a thin and robust passivation layer of high film quality to protect electronic devices, components, and systems from the disruptive environmental conditions.

    摘要翻译： 一种制造用于电子设备的钝化层和钝化层的方法。 钝化层包括至少一个钝化膜层和至少一个纳米颗粒层。 第一膜层由诸如氧化铝（Al2O3）的绝缘基体形成，并且第一层金属纳米颗粒层（例如铂纳米颗粒层）沉积在第一膜层上。 附加层由交替的膜层和纳米颗粒层形成。 所得到的钝化层提供了一种具有高膜质量的薄且坚固的钝化层，以保护电子设备，部件和系统免受破坏性环境条件的影响。

    Method for fabricating MEMS device
    8.
    发明授权
    Method for fabricating MEMS device 有权
    制造MEMS器件的方法

    公开(公告)号：US08030112B2

    公开(公告)日：2011-10-04

    申请号：US12691754

    申请日：2010-01-22

    申请人： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

    发明人： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00246 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C2201/016 ,  B81C2203/0714 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    摘要： A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.

    摘要翻译： 一种制造MEMS器件的方法包括：提供具有第一表面和第二表面并具有MEMS区域和IC区域的单晶衬底; 在MEMS区域的第一表面上形成SCS质量块; 在所述基板的所述第一表面上形成结构介电层，其中所述结构介电层的电介质部件填充在所述MEMS区域中围绕所述SCS质量块的空间中，所述IC区域具有形成在所述MEMS区域中的互连结构的电路结构 结构介电层; 通过在第二表面上的蚀刻工艺对单晶衬底进行图案化，以暴露填充在围绕SCS质量块的空间中的电介质构件的一部分; 至少在填充在SCS质量块周围的空间中的电介质部分上进行各向同性蚀刻处理。 暴露SCS质量块以释放MEMS结构。

    Silicon-Rich Nitride Etch Stop Layer for Vapor HF Etching in MEMS Device Fabrication
    9.
    发明申请
    Silicon-Rich Nitride Etch Stop Layer for Vapor HF Etching in MEMS Device Fabrication 审中-公开
    富氮氮化物蚀刻停止层用于MEMS器件制造中的蒸气HF蚀刻

    公开(公告)号：US20100320548A1

    公开(公告)日：2010-12-23

    申请号：US12813117

    申请日：2010-06-10

    申请人： Christine H. Tsau ,  Thomas Kieran Nunan

    发明人： Christine H. Tsau ,  Thomas Kieran Nunan

    IPC分类号： H01L29/84 ,  H01L21/30 ,  H01L21/318 ,  H01L29/06

    CPC分类号： G01P15/125 ,  B81C1/0019 ,  B81C1/00595 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/016 ,  B81C2201/053 ,  G01P15/0802 ,  H01L21/31116

    摘要： A thin silicon-rich nitride film (e.g., having a thickness in the range of around 100A to 10000A) deposited using low-pressure chemical vapor deposition (LPCVD) is used for etch stop during vapor HF etching in various MEMS wafer fabrication processes and devices. The LPCVD silicon-rich nitride film may replace, or be used in combination with, a LPCVD stoichiometric nitride layer in many existing MEMS fabrication processes and devices. The LPCVD silicon-rich nitride film is deposited at high temperatures (e.g., typically around 650-900 degrees C.). Such a LPCVD silicon-rich nitride film generally has enhanced etch selectivity to vapor HF and other harsh chemical environments compared to stoichiometric silicon nitride and therefore a thinner layer typically can be used as an embedded etch stop layer in various MEMS wafer fabrication processes and devices and particularly for vapor HF etching processes, saving time and money in the fabrication process.

    摘要翻译： 使用低压化学气相沉积（LPCVD）沉积的薄的富硅氮化物膜（例如，厚度在约100A至10000A的范围内）用于各种MEMS晶片制造工艺和器件中的蒸气HF蚀刻期间的蚀刻停止 。 LPCVD富硅氮化物膜可以在许多现有的MEMS制造工艺和器件中替代或与其组合使用LPCVD化学计量氮化物层。 LPCVD富硅氮化物膜在高温（例如典型地约650-900℃）下沉积。 与化学计量的氮化硅相比，这种LPCVD富硅氮化物膜通常对蒸汽HF和其它恶劣的化学环境具有增强的蚀刻选择性，因此较薄的层通常可用作各种MEMS晶片制造工艺和器件中的嵌入式蚀刻停止层， 特别是对于蒸汽HF蚀刻工艺，节省了制造过程中的时间和金钱。