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公开(公告)号:US10094039B2
公开(公告)日:2018-10-09
申请号:US15004697
申请日:2016-01-22
Applicant: UNIVERSITY OF UTAH RESEARCH FOUNDATION
Inventor: Michael Hans Risbud Bartl , JacQueline T. Siy
Abstract: Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.
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公开(公告)号:US20160138183A1
公开(公告)日:2016-05-19
申请号:US15004697
申请日:2016-01-22
Applicant: UNIVERSITY OF UTAH RESEARCH FOUNDATION
Inventor: Michael Hans Risbud Bartl , JacQueline T. Siy
CPC classification number: C30B7/14 , C09K11/881 , C09K11/883 , C30B29/16 , C30B29/40 , C30B29/46 , C30B29/48 , C30B29/605
Abstract: Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.
Abstract translation: 低温有机金属成核和基于结晶的合成方法,用于制造具有窄尺寸分布和可调,尺寸和形状依赖的电子和光学性质的半导体和金属胶体纳米晶体。 方法包括(1)在包括至少一种溶剂,阳离子前体,阴离子前体和至少第一表面稳定配体的惰性气氛下在反应容器中形成反应混合物,同时在约 50℃至约130℃,和(2)在保持温度,搅拌和惰性气体气氛的同时在反应混合物中生长纳米晶体一段时间。
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