公开(公告)号：US09741619B2

公开(公告)日：2017-08-22

申请号：US15402192

申请日：2017-01-09

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： William John Nelson ,  Nathapong Suthiwongsunthorn ,  Beng Yeung Ho ,  Poh Leng Wilson Ong

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/3065 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311 ,  H01L23/31 ,  H01L23/00 ,  H01L21/268 ,  H01L23/544 ,  H01L23/29

CPC classification number: H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/82 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/544 ,  H01L24/14 ,  H01L2223/54453 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/03

Abstract: Methods for dicing a wafer is presented. The method includes providing a wafer having first and second major surfaces. The wafer is prepared with a plurality of dies on main device regions and are spaced apart from each other by dicing channels on the first major surface of the wafer. A film is provided over first or second major surface of the wafer. The film covers at least areas corresponding to the main device regions. The method also includes using the film as an etch mask and plasma etching the wafer through exposed semiconductor material of the wafer to form gaps to separate the plurality of dies on the wafer into a plurality of individual dies.

公开(公告)号：US09570314B2

公开(公告)日：2017-02-14

申请号：US14881181

申请日：2015-10-13

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： William John Nelson ,  Nathapong Suthiwongsunthorn ,  Beng Yeung Ho ,  Poh Leng Wilson Ong

IPC: H01L21/3065 ,  H01L21/78 ,  H01L21/308 ,  H01L21/311 ,  H01L21/304 ,  H01L21/82 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/82 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/544 ,  H01L24/14 ,  H01L2223/54453 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/03

Abstract: Methods for dicing a wafer is presented. The method includes providing a wafer having first and second major surfaces. The wafer is prepared with a plurality of dies on main device regions and are spaced apart from each other by dicing channels on the first major surface of the wafer. A film is provided over first or second major surface of the wafer. The film covers at least areas corresponding to the main device regions. The method also includes using the film as an etch mask and plasma etching the wafer through exposed semiconductor material of the wafer to form gaps to separate the plurality of dies on the wafer into a plurality of individual dies.

Abstract translation: 介绍了切割晶片的方法。 该方法包括提供具有第一和第二主表面的晶片。 晶片在主要器件区域上由多个管芯制成并且通过晶片的第一主表面上的切割通道彼此间隔开。 在晶片的第一或第二主表面上提供膜。 薄膜至少覆盖对应于主要装置区域的区域。 该方法还包括使用该膜作为蚀刻掩模和等离子体通过晶片的暴露的半导体材料蚀刻晶片以形成间隙，以将晶片上的多个管芯分离成多个单独的管芯。