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1.发明授权Semiconductor light-emitting device having groove in P-type semiconductor layer and method for manufacturing the same 有权在P型半导体层中具有凹槽的半导体发光器件及其制造方法公开(公告)号：US08502249B2
公开(公告)日：2013-08-06
申请号：US12949245
申请日：2010-11-18
申请人： Ung Lee , Yoon Seok Park , Won Keun Cho , So Young Jang
发明人： Ung Lee , Yoon Seok Park , Won Keun Cho , So Young Jang
摘要： A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.
摘要翻译： 公开了一种能够改善电流分布的半导体发光器件及其制造方法，其中半导体发光器件包括衬底; 在该基板上的N型氮化物半导体层; N型氮化物半导体层上的有源层; 有源层上的P型氮化物半导体层; P型氮化物半导体层中的沟槽，以在P型氮化物半导体层中形成预定图案; 凹槽中透明非导电材料的导光体; 以及在具有光导的P型氮化物半导体层上的透明电极层。
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公开(公告)号：US20110114980A1
公开(公告)日：2011-05-19
申请号：US12949245
申请日：2010-11-18
申请人： Ung Lee , Yoon Seok Park , Won Keun Cho , So Young Jang
发明人： Ung Lee , Yoon Seok Park , Won Keun Cho , So Young Jang
摘要： A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.
摘要翻译： 公开了一种能够改善电流分布的半导体发光器件及其制造方法，其中半导体发光器件包括衬底; 在该基板上的N型氮化物半导体层; N型氮化物半导体层上的有源层; 有源层上的P型氮化物半导体层; P型氮化物半导体层中的沟槽，以在P型氮化物半导体层中形成预定图案; 凹槽中透明非导电材料的导光体; 以及在具有光导的P型氮化物半导体层上的透明电极层。
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