公开(公告)号：US20120070924A1

公开(公告)日：2012-03-22

申请号：US12976492

申请日：2010-12-22

申请人： Su Hyoung SON ,  Kyoung Jin Kim ,  Won Keun Cho ,  Eun Mi Ko ,  Hyung Sun Hwang

发明人： Su Hyoung SON ,  Kyoung Jin Kim ,  Won Keun Cho ,  Eun Mi Ko ,  Hyung Sun Hwang

IPC分类号： H01L33/44 ,  H01L33/50

CPC分类号： H01L33/007 ,  H01L33/22

摘要： Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.

摘要翻译： 公开了一种半导体发光器件的制造方法，该半导体发光器件在干蚀刻工艺之后进行湿蚀刻工艺，以在其上形成氮化物半导体材料的衬底的表面中形成突起。 该方法包括用光刻胶涂覆基底; 通过选择性地除去光致抗蚀剂在衬底上形成掩模图案; 通过使用蚀刻气体通过用掩模图案干蚀刻基板在基板上形成突起; 通过使用蚀刻溶液湿法蚀刻干蚀刻基板; 在包括所述突起的所述基板上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 蚀刻有源层和第二半导体层的预定部分直到暴露第一​​半导体层; 以及在所述第一半导体层的预定部分上形成第一电极，其中所述有源层和所述第二半导体层未形成在所述第一半导体层的所述预定部分上，并且在所述第二半导体层上形成第二电极。

公开(公告)号：US08502249B2

公开(公告)日：2013-08-06

申请号：US12949245

申请日：2010-11-18

申请人： Ung Lee ,  Yoon Seok Park ,  Won Keun Cho ,  So Young Jang

发明人： Ung Lee ,  Yoon Seok Park ,  Won Keun Cho ,  So Young Jang

IPC分类号： H01L33/00 ,  H01L29/06 ,  H01L21/00 ,  F21V7/04

CPC分类号： H01L33/20 ,  H01L33/10

摘要： A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.

摘要翻译： 公开了一种能够改善电流分布的半导体发光器件及其制造方法，其中半导体发光器件包括衬底; 在该基板上的N型氮化物半导体层; N型氮化物半导体层上的有源层; 有源层上的P型氮化物半导体层; P型氮化物半导体层中的沟槽，以在P型氮化物半导体层中形成预定图案; 凹槽中透明非导电材料的导光体; 以及在具有光导的P型氮化物半导体层上的透明电极层。

公开(公告)号：US08298842B2

公开(公告)日：2012-10-30

申请号：US12976492

申请日：2010-12-22

申请人： Su Hyoung Son ,  Kyoung Jin Kim ,  Won Keun Cho ,  Eun Mi Ko ,  Hyung Sun Hwang

发明人： Su Hyoung Son ,  Kyoung Jin Kim ,  Won Keun Cho ,  Eun Mi Ko ,  Hyung Sun Hwang

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/22

摘要： Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.

摘要翻译： 公开了一种半导体发光器件的制造方法，该半导体发光器件在干蚀刻工艺之后进行湿蚀刻工艺，以在其上形成氮化物半导体材料的衬底的表面中形成突起。 该方法包括用光刻胶涂覆基底; 通过选择性地除去光致抗蚀剂在衬底上形成掩模图案; 通过使用蚀刻气体通过用掩模图案干蚀刻基板在基板上形成突起; 通过使用蚀刻溶液湿法蚀刻干蚀刻基板; 在包括所述突起的所述基板上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 蚀刻有源层和第二半导体层的预定部分直到暴露第一​​半导体层; 以及在所述第一半导体层的预定部分上形成第一电极，其中所述有源层和所述第二半导体层未形成在所述第一半导体层的所述预定部分上，并且在所述第二半导体层上形成第二电极。

公开(公告)号：US20110114980A1

公开(公告)日：2011-05-19

申请号：US12949245

申请日：2010-11-18

申请人： Ung Lee ,  Yoon Seok Park ,  Won Keun Cho ,  So Young Jang

发明人： Ung Lee ,  Yoon Seok Park ,  Won Keun Cho ,  So Young Jang

IPC分类号： H01L33/60 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/10

摘要： A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.

摘要翻译： 公开了一种能够改善电流分布的半导体发光器件及其制造方法，其中半导体发光器件包括衬底; 在该基板上的N型氮化物半导体层; N型氮化物半导体层上的有源层; 有源层上的P型氮化物半导体层; P型氮化物半导体层中的沟槽，以在P型氮化物半导体层中形成预定图案; 凹槽中透明非导电材料的导光体; 以及在具有光导的P型氮化物半导体层上的透明电极层。