公开(公告)号：US20150325453A1

公开(公告)日：2015-11-12

申请号：US14273283

申请日：2014-05-08

Applicant: United Microelectronics Corp.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang ,  Chieh-Te Chen ,  Cheng-Hsing Chuang

IPC: H01L21/311

CPC classification number: H01L21/31111 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76897

Abstract: A method of forming a semiconductor device is provided. A material layer, a first flowing material layer and a first mask layer are sequentially formed on a substrate. A first etching process is performed by using the first mask layer as a mask, so as to form a first opening in the material layer. The first mask layer and the first flowing material layer are removed. A filler layer is formed in the first opening. A second flowing material layer is formed on the material layer and the filler layer. A second mask layer is formed on the second flowing material layer. A second etching process is performed by using the second mask layer as a mask, so as to form a second opening in the material layer.

Abstract translation: 提供一种形成半导体器件的方法。 在基板上依次形成材料层，第一流动材料层和第一掩模层。 通过使用第一掩模层作为掩模来进行第一蚀刻工艺，以在材料层中形成第一开口。 去除第一掩模层和第一流动材料层。 在第一开口中形成填充层。 在材料层和填料层上形成第二流动材料层。 在第二流动材料层上形成第二掩模层。 通过使用第二掩模层作为掩模来进行第二蚀刻处理，以在材料层中形成第二开口。

公开(公告)号：US08916475B1

公开(公告)日：2014-12-23

申请号：US14070262

申请日：2013-11-01

Applicant: United Microelectronics Corp.

Inventor： Chieh-Te Chen ,  Feng-Yi Chang ,  Hsuan-Hsu Chen ,  Cheng-Hsing Chuang

IPC: H01L21/311 ,  H01L21/308

CPC classification number: H01L21/3085 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/823431

Abstract: A patterning method is provided. A mask composite layer and a first tri-layer photoresist are sequentially formed on a target layer. A first etching is performed to the mask composite layer, using the first tri-layer photoresist as a mask, to form at least one first opening in an upper portion of the mask composite layer. The first tri-layer photoresist is removed. A second tri-layer photoresist is formed on the mask composite layer. A second etching is performed to the mask composite layer, using the second tri-layer photoresist as a mask, to form at least one second opening in the upper portion of the mask composite layer. The second tri-layer photoresist is removed. A lower portion of the mask composite layer is patterned by using the upper portion of the mask composite layer as a mask. The target layer is patterned by using the patterned mask composite layer as a mask.

Abstract translation: 提供了图案化方法。 在目标层上依次形成掩模复合层和第一三层光致抗蚀剂。 使用第一三层光致抗蚀剂作为掩模对掩模复合层进行第一蚀刻，以在掩模复合层的上部中形成至少一个第一开口。 去除第一三层光致抗蚀剂。 在掩模复合层上形成第二三层光致抗蚀剂。 使用第二三层光致抗蚀剂作为掩模对掩模复合层进行第二蚀刻，以在掩模复合层的上部形成至少一个第二开口。 去除第二三层光致抗蚀剂。 通过使用掩模复合层的上部作为掩模来对掩模复合层的下部进行图案化。 通过使用图案化掩模复合层作为掩模来对目标层进行图案化。

公开(公告)号：US09263294B2

公开(公告)日：2016-02-16

申请号：US14273283

申请日：2014-05-08

Applicant: United Microelectronics Corp.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang ,  Chieh-Te Chen ,  Cheng-Hsing Chuang

IPC: H01L21/4763 ,  H01L21/311

CPC classification number: H01L21/31111 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76897

Abstract: A method of forming a semiconductor device is provided. A material layer, a first flowing material layer and a first mask layer are sequentially formed on a substrate. A first etching process is performed by using the first mask layer as a mask, so as to form a first opening in the material layer. The first mask layer and the first flowing material layer are removed. A filler layer is formed in the first opening. A second flowing material layer is formed on the material layer and the filler layer. A second mask layer is formed on the second flowing material layer. A second etching process is performed by using the second mask layer as a mask, so as to form a second opening in the material layer.

Abstract translation: 提供一种形成半导体器件的方法。 在基板上依次形成材料层，第一流动材料层和第一掩模层。 通过使用第一掩模层作为掩模来进行第一蚀刻工艺，以在材料层中形成第一开口。 去除第一掩模层和第一流动材料层。 在第一开口中形成填充层。 在材料层和填料层上形成第二流动材料层。 在第二流动材料层上形成第二掩模层。 通过使用第二掩模层作为掩模来进行第二蚀刻处理，以在材料层中形成第二开口。