公开(公告)号：US09793258B1

公开(公告)日：2017-10-17

申请号：US15344212

申请日：2016-11-04

Applicant: United Microelectronics Corp.

Inventor： Cheng-Te Lin ,  Li-Cih Wang ,  Tien-Hao Tang

IPC: H01L27/02

CPC classification number: H01L27/0266 ,  H01L27/0259 ,  H01L27/0288

Abstract: An electrostatic discharge device includes a substrate. A deep doped well of a first conductive type is disposed in the substrate. A drain doped well of the first conductive type is disposed in the substrate above the deep doped well. An inserted doping well of a second conductive type is disposed in the drain doped well, in contact with the deep doped well. A drain region of the first conductive type is in the drain doped well and above the inserted doping well. An inserted drain of the second conductive type is on the inserted doping well and surrounded by the drain region. A source doped well of the second conductive type is disposed in the substrate, abut the drain doped well. A source region is disposed in the source doped well. A gate structure is disposed on the substrate between the drain region and the source region.