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    Die seal ring and method of forming the same
    1.
    发明授权
    Die seal ring and method of forming the same 有权
    模具密封环及其形成方法

    公开(公告)号：US09048246B2

    公开(公告)日：2015-06-02

    申请号：US13921174

    申请日：2013-06-18

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Ming-Te Wei ,  Po-Chao Tsao ,  Ching-Li Yang ,  Chien-Yang Chen ,  Hui-Ling Chen ,  Guan-Kai Huang

    IPC: H01L23/00 ,  H01L21/768 ,  H01L21/78 ,  H01L23/58

    CPC classification number: H01L23/562 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A die seal ring is provided. The die seal ring includes a substrate and a first layer extruding from the substrate. The first layer has a first fin ring structure and a layout of the first fin ring structure has a stamp-like shape. In addition, a method for forming a die seal ring is provided. A substrate having an active region is provided. A patterned sacrificial layer is formed on the substrate. A spacer is formed on the sidewall of the patterned sacrificial layer. The patterned sacrificial layer is removed. The substrate is patterned by using the spacer as a mask, thereby simultaneously forming at least a fin structure of a Fin-FET and a first layer of the die seal ring.

    Abstract translation: 提供了模具密封环。 模具密封环包括基材和从基材挤出的第一层。 第一层具有第一鳍环结构，并且第一鳍环结构的布局具有戳状形状。 此外，提供了一种用于形成模具密封环的方法。 提供具有有源区的衬底。 在衬底上形成图案化的牺牲层。 在图案化牺牲层的侧壁上形成间隔物。 图案化的牺牲层被去除。 通过使用间隔物作为掩模对衬底进行构图，从而同时形成Fin-FET的鳍结构和模密封环的第一层。

    HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND FORMING METHOD THEREOF
    5.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND FORMING METHOD THEREOF 有权

    公开(公告)号：US20220173236A1

    公开(公告)日：2022-06-02

    申请号：US17676799

    申请日：2022-02-21

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Kuo-Hsing Lee ,  Yi-Chung Sheng ,  Sheng-Yuan Hsueh ,  Chih-Kai Kang ,  Guan-Kai Huang ,  Chien-Liang Wu

    IPC: H01L29/778 ,  H01L29/66

    Abstract: A high electron mobility transistor (HEMT) includes a carrier transit layer, a carrier supply layer, a main gate, a control gate, a source electrode and a drain electrode. The carrier transit layer is on a substrate. The carrier supply layer is on the carrier transit layer. The main gate and the control gate are on the carrier supply layer. A fluoride ion doped region is formed right below the main gate in the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the main gate and the control gate, wherein the source electrode is electrically connected to the control gate by a metal interconnect. The present invention also provides a method of forming a high electron mobility transistor (HEMT).

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