公开(公告)号：US10522652B1

公开(公告)日：2019-12-31

申请号：US16129502

申请日：2018-09-12

Applicant: United Microelectronics Corp.

Inventor： Po-Wen Su ,  Chih-Wei Lin ,  Wei-Chih Lai ,  Tai-Yen Lin

IPC: H01L21/8234 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/321 ,  H01L29/66 ,  H01L27/088 ,  H01L21/033 ,  H01L21/3105

Abstract: A semiconductor device and a method for fabricating the same are provided. A structure of the semiconductor device includes a substrate having a device region and an edge region. A plurality of device structures is formed on the substrate. An etching stop layer is disposed in the edge region of the substrate. The etching stop layer is converted from P-type dopants from an exposed surface layer of the substrate.