公开(公告)号：US10446667B2

公开(公告)日：2019-10-15

申请号：US16404749

申请日：2019-05-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Yi-Liang Ye ,  Sung-Yuan Tsai ,  Chun-Wei Yu ,  Yu-Ren Wang ,  Zhen Wu ,  Tai-Yen Lin

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/285 ,  H01L29/78 ,  H01L21/265 ,  H01L29/08 ,  H01L21/02 ,  H01L21/3115

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.

公开(公告)号：US10522652B1

公开(公告)日：2019-12-31

申请号：US16129502

申请日：2018-09-12

Applicant: United Microelectronics Corp.

Inventor： Po-Wen Su ,  Chih-Wei Lin ,  Wei-Chih Lai ,  Tai-Yen Lin

IPC: H01L21/8234 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/321 ,  H01L29/66 ,  H01L27/088 ,  H01L21/033 ,  H01L21/3105

Abstract: A semiconductor device and a method for fabricating the same are provided. A structure of the semiconductor device includes a substrate having a device region and an edge region. A plurality of device structures is formed on the substrate. An etching stop layer is disposed in the edge region of the substrate. The etching stop layer is converted from P-type dopants from an exposed surface layer of the substrate.

公开(公告)号：US20190280106A1

公开(公告)日：2019-09-12

申请号：US16404749

申请日：2019-05-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Yi-Liang Ye ,  Sung-Yuan Tsai ,  Chun-Wei Yu ,  Yu-Ren Wang ,  Zhen Wu ,  Tai-Yen Lin

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/285 ,  H01L29/08 ,  H01L29/78 ,  H01L21/265

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.

公开(公告)号：US10332981B1

公开(公告)日：2019-06-25

申请号：US15943657

申请日：2018-04-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Yi-Liang Ye ,  Sung-Yuan Tsai ,  Chun-Wei Yu ,  Yu-Ren Wang ,  Zhen Wu ,  Tai-Yen Lin

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L21/02

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.