公开(公告)号：US20160003888A1

公开(公告)日：2016-01-07

申请号：US14321841

申请日：2014-07-02

Applicant: United Microelectronics Corp.

Inventor： Wen-Yin Weng ,  Wei-Heng Hsu ,  Cheng-Tung Huang ,  Yi-Ting Wu ,  Yu-Ming Lin ,  Jen-Yu Wang

IPC: G01R31/26

CPC classification number: G01R31/2621

Abstract: A method of characterizing a device may be used to determine a metal work function of the device according to a threshold voltage, a body effect, and an oxide capacitance of the device. The threshold voltage may be determined according to a current to voltage curve. The oxide capacitance may be determined according to a capacitor to voltage curve.

Abstract translation: 可以使用表征器件的方法来根据器件的阈值电压，体效应和氧化物电容来确定器件的金属功函数。 可以根据电流 - 电压曲线来确定阈值电压。 可以根据电容器对电压曲线来确定氧化物电容。

公开(公告)号：US10312235B2

公开(公告)日：2019-06-04

申请号：US15892366

申请日：2018-02-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Yin Weng ,  Cheng-Tung Huang ,  Wei-Heng Hsu ,  Yu-Ming Lin ,  Ya-Ru Yang

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8258 ,  H01L27/088 ,  H01L27/092 ,  H01L29/165 ,  H01L29/205 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

公开(公告)号：US20180166444A1

公开(公告)日：2018-06-14

申请号：US15892366

申请日：2018-02-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Yin Weng ,  Cheng-Tung Huang ,  Wei-Heng Hsu ,  Yu-Ming Lin ,  Ya-Ru Yang

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/205 ,  H01L29/165 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8258 ,  H01L21/02

CPC classification number: H01L27/0886 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/205 ,  H01L29/66795 ,  H01L29/7849 ,  H01L29/7851

Abstract: A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

公开(公告)号：US09929154B2

公开(公告)日：2018-03-27

申请号：US14541085

申请日：2014-11-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Yin Weng ,  Cheng-Tung Huang ,  Wei-Heng Hsu ,  Yu-Ming Lin ,  Ya-Ru Yang

IPC: H01L27/085 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L29/205 ,  H01L29/165 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8258 ,  H01L21/02

CPC classification number: H01L27/0886 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/205 ,  H01L29/66795 ,  H01L29/7849 ,  H01L29/7851

Abstract: A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

公开(公告)号：US20160141288A1

公开(公告)日：2016-05-19

申请号：US14541085

申请日：2014-11-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Yin Weng ,  Cheng-Tung Huang ,  Wei-Heng Hsu ,  Yu-Ming Lin ,  Ya-Ru Yang

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/205 ,  H01L21/02 ,  H01L29/06 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L27/0886 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/205 ,  H01L29/66795 ,  H01L29/7849 ,  H01L29/7851

Abstract: A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

Abstract translation: 鳍状结构及其形成方法。 该方法包括提供具有第一鳍结构和第二鳍结构的衬底。 接下来，在基板上形成绝缘材料层。 然后，去除第一鳍片结构的一部分以形成第一凹部。 接下来，在第一凹部中依次形成第一缓冲层和第一沟道层。 接下来，去除第二鳍结构的一部分，以形成第二凹部。 然后，顺序地在第二凹部中形成第二缓冲层和第二沟道层，其中第二缓冲层与第一缓冲层不同。