公开(公告)号：US09379182B1

公开(公告)日：2016-06-28

申请号：US14612352

申请日：2015-02-03

Applicant: United Microelectronics Corporation

Inventor： Chun Jen Chen ,  Bin-Siang Tsai ,  Tsai-Yu Wen ,  Yu Shu Lin ,  Chin-Sheng Yang

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/161 ,  H01L21/02 ,  H01L29/423 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02587 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/76224 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/165 ,  H01L29/413 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785 ,  H01L2029/7858

Abstract: A method for forming germanium nanowires comprises forming a semiconductor fin structure including alternating fin and shallow trench structures, etching a top portion of the fin to form a fin recess and depositing a germanium-based semiconductor into the fin recess as a germanium-based plug. The method comprises etching the shallow trench structure to expose the germanium-based semiconductor side faces. The exposed germanium-based semiconductor undergoes annealing to form high carrier mobility nanowire structures. The nanowire structures can also be formed of different diameters by selective oxidation of some of the deposited germanium-based plugs. Alternately, forming fin structures of different widths results in deposited germanium plugs of different widths to be deposited to form different thicknesses of nanowires.

Abstract translation: 形成锗纳米线的方法包括形成包括交替的鳍和浅沟槽结构的半导体鳍结构，蚀刻翅片的顶部以形成翅片凹槽，并将锗基半导体作为基于锗的塞子沉积到翅片凹槽中。 该方法包括蚀刻浅沟槽结构以暴露锗基半导体侧面。 暴露的锗基半导体经历退火以形成高载流子迁移率纳米线结构。 纳米线结构也可以通过选择性氧化一些沉积的基于锗的塞子而由不同的直径形成。 或者，形成不同宽度的翅片结构导致沉积不同宽度的沉积的锗塞以形成不同厚度的纳米线。