Deep HOMO (highest occupied molecular orbital) emitter device structures

    公开(公告)号:US11515482B2

    公开(公告)日:2022-11-29

    申请号:US16596948

    申请日:2019-10-09

    IPC分类号: H01L51/00 C09K11/06 H01L51/50

    摘要: Embodiments of the disclosed subject matter provide an organic light emitting diode (OLED) having an anode, a cathode, an emissive layer disposed between the anode and the cathode, and a hole blocking layer disposed between the emissive and the cathode. The emissive layer may include a phosphorescent dopant, where the phosphorescent dopant has an emission in 0.5% doped PMMA (Poly(methyl methacrylate)) thin film with a peak maximum wavelength that is greater than or equal to 600 nm at room temperature. The energy of a highest occupied molecular orbital (HOMO) of the phosphorescent dopant may be lower than or equal to −5.1 eV, and the energy of the HOMO of the hole blocking layer is at least 0.1 eV lower than the energy of the HOMO of the phosphorescent dopant.