公开(公告)号：US20180002829A1

公开(公告)日：2018-01-04

申请号：US15542039

申请日：2015-12-23

Applicant: Universität Paderborn

Inventor： Siegmund GREULICH-WEBER

IPC: C30B25/00 ,  C23C16/32 ,  C30B29/36 ,  C30B29/66

CPC classification number: C30B25/00 ,  B01J19/02 ,  B01J19/18 ,  B01J2219/00135 ,  B01J2219/0227 ,  C01B32/956 ,  C01P2004/10 ,  C23C16/325 ,  C30B29/36 ,  C30B29/66 ,  D01F9/08

Abstract: The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fibre.