公开(公告)号：US20230152360A1

公开(公告)日：2023-05-18

申请号：US18098704

申请日：2023-01-19

Applicant: University of Electronic Science and Technology of China

Inventor： Cheng Zeng ,  Tianhui Sun ,  Junsong Ning ,  Shirong Bu ,  Zhanping Wang

IPC: G01R27/26

CPC classification number: G01R27/2688

Abstract: A device for measuring a microwave surface resistance of a dielectric conductor deposition interface includes: a test platform, a calibration component, a sealing cavity and a support plate; wherein the test platform comprises: a shielding cavity having an open bottom, a dielectric rod, an input coupling structure, an output coupling structure, and a dielectric supporter; the dielectric conductor test sample and the test platform form a TE0m(n+δ) mode dielectric resonator; the calibration component and the dielectric conductor test sample are mounted on the test platform to measure corresponding quality factors, thereby calculating the microwave surface resistance of the deposition interface of the dielectric conductor test sample. The present invention requires no pre-measurement of relative permittivity and loss tangent of the dielectric conductor test sample. After calibration, the microwave surface resistance of the dielectric conductor deposition interface can be obtained by only one non-destructive measurement.

公开(公告)号：US11815588B2

公开(公告)日：2023-11-14

申请号：US16920781

申请日：2020-07-06

Applicant: University of Electronic Science and Technology of China

Inventor： Shirong Bu ,  Liu Chen ,  Cheng Zeng ,  Junsong Ning ,  Zhanping Wang ,  Yang Fu ,  Ruyi Wang ,  Chenle Wang

IPC: G01S13/08 ,  H03H7/38 ,  H01S1/00 ,  H01S5/042 ,  H03F3/19 ,  H03F1/56 ,  G06K19/07 ,  G06K7/10 ,  H01P1/38 ,  H01S5/50

CPC classification number: G01S13/08 ,  G06K7/10366 ,  G06K19/0708 ,  G06K19/0723 ,  H01P1/38 ,  H01S1/00 ,  H01S5/042 ,  H01S5/5009 ,  H01S5/5018 ,  H01S5/5036 ,  H03F1/56 ,  H03F3/19 ,  H03H7/38 ,  H03F2200/222

Abstract: A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.