公开(公告)号：US11815588B2

公开(公告)日：2023-11-14

申请号：US16920781

申请日：2020-07-06

Applicant: University of Electronic Science and Technology of China

Inventor： Shirong Bu ,  Liu Chen ,  Cheng Zeng ,  Junsong Ning ,  Zhanping Wang ,  Yang Fu ,  Ruyi Wang ,  Chenle Wang

IPC: G01S13/08 ,  H03H7/38 ,  H01S1/00 ,  H01S5/042 ,  H03F3/19 ,  H03F1/56 ,  G06K19/07 ,  G06K7/10 ,  H01P1/38 ,  H01S5/50

CPC classification number: G01S13/08 ,  G06K7/10366 ,  G06K19/0708 ,  G06K19/0723 ,  H01P1/38 ,  H01S1/00 ,  H01S5/042 ,  H01S5/5009 ,  H01S5/5018 ,  H01S5/5036 ,  H03F1/56 ,  H03F3/19 ,  H03H7/38 ,  H03F2200/222

Abstract: A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.