公开(公告)号：US20180061972A1

公开(公告)日：2018-03-01

申请号：US15600795

申请日：2017-05-22

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaorong LUO ,  Gaoqiang DENG ,  Kun ZHOU ,  Qing LIU ,  Linhua HUANG ,  Tao SUN ,  Bo ZHANG

IPC: H01L29/739 ,  H01L29/74 ,  H01L29/10 ,  H01L29/08 ,  H01L29/861

CPC classification number: H01L29/7397 ,  H01L29/0634 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7416 ,  H01L29/8611

Abstract: The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.