公开(公告)号：US11973136B2

公开(公告)日：2024-04-30

申请号：US17264521

申请日：2019-12-20

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang Xu ,  Yan Wang ,  Yunqiu Wu

IPC: H01L29/778 ,  H01L21/02 ,  H01L23/14 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L23/145 ,  H01L29/2003 ,  H01L29/66462

Abstract: The present disclosure provides a flexible microwave power transistor and a preparation method thereof. In view of great lattice mismatch and poor performance of a device prepared with a Si substrate in an existing preparation method, the preparation method of the present disclosure grows a gallium nitride high electron mobility transistor (GaN HEMT) layer on a rigid silicon carbide (SiC) substrate to avoid lattice mismatch between a silicon (Si) substrate and gallium nitride (GaN), improving performance of the flexible microwave power transistor. Moreover, in view of problems such as low output power, power added efficiency and power gain with the existing device preparation method, the present disclosure retains part of the rigid SiC substrate and grows a flexible substrates at room temperature to prepare a high-quality device. The present disclosure has greatly improved power output capability, efficiency and gain, and basically unchanged performance of device under 0.75% of stress.