公开(公告)号：US11062072B1

公开(公告)日：2021-07-13

申请号：US16912006

申请日：2020-06-25

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang Xu ,  Shuman Mao ,  Yunqiu Wu

IPC: G06F30/30 ,  G06F30/367 ,  G06F30/373 ,  G06F119/22 ,  G06F119/06

Abstract: A yield load pull system-based integrated circuit design method and a system thereof are provided. The method includes: setting a yield-related threshold; setting a source impedance; configuring a sweep range of a Smith chart; determining load impedance points within the sweep range of the Smith chart; acquiring impedance information; determining output characteristics of a plurality of sample devices at each load impedance point of the determined load impedance points, based on the source impedance and the impedance information corresponding to each load impedance point, by invoking a harmonic balance simulator embedded in an Advanced Design System, where the output characteristics comprise: a large-signal gain, an output power and a power-added efficiency; determining a device yield for each load impedance point; for each output characteristic calculating a mean value across the plurality of sample devices, at each load impedance point; and determining a best load impedance; conducting IC design.

公开(公告)号：US11973136B2

公开(公告)日：2024-04-30

申请号：US17264521

申请日：2019-12-20

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang Xu ,  Yan Wang ,  Yunqiu Wu

IPC: H01L29/778 ,  H01L21/02 ,  H01L23/14 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L23/145 ,  H01L29/2003 ,  H01L29/66462

Abstract: The present disclosure provides a flexible microwave power transistor and a preparation method thereof. In view of great lattice mismatch and poor performance of a device prepared with a Si substrate in an existing preparation method, the preparation method of the present disclosure grows a gallium nitride high electron mobility transistor (GaN HEMT) layer on a rigid silicon carbide (SiC) substrate to avoid lattice mismatch between a silicon (Si) substrate and gallium nitride (GaN), improving performance of the flexible microwave power transistor. Moreover, in view of problems such as low output power, power added efficiency and power gain with the existing device preparation method, the present disclosure retains part of the rigid SiC substrate and grows a flexible substrates at room temperature to prepare a high-quality device. The present disclosure has greatly improved power output capability, efficiency and gain, and basically unchanged performance of device under 0.75% of stress.